KSD1691 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor KSD1691
DESCRIPTION
- High Collector Current -IC= 5A
- Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max.)@ IC= 2A
- Complement to Type KSB1151
APPLICATIONS
- Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Pulse 8 A IB Base Current-Continuous 1 A PC Collector Power Dissipation @ TC=25℃ 20 W Collector Power Dissipation @ Ta=25℃ 1.3 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Power Transistor KSD1691
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage I C= 2A; IB= 0.2A 0.3 V VBE(sat) Base-Emitter Saturation Voltage I C= 2A; IB= 0.2A 1.2 V ICBO Collector Cutoff Current V CB= 50V; IE= 0 10 μA IEBO Emitter Cutoff Current V EB= 7V; IC= 0 10 μA hFE-1 DC Current Gain I C= 0.1A; VCE= 1V 60 hFE-2 DC Current Gain I C= 2A; VCE= 1V 100 400 hFE-3 DC Current Gain I C= 5A; VCE= 1V 50 Switching Times ton Turn-on Time IC= 2A, IB1= -IB2= 0.2A; RL= 5Ω; VCC= 10V 1.0 μs tstg Storage Time 2.5 μs tf Fall Time 1.0 μs hFE-2 Classifications O Y G 100-200 160-320 200-400