KSD1408 ISC
Document overview
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Technical content
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Power Transistor KSD1408
DESCRIPTION
- Low Collector Saturation Voltage- : V CE(sat)= 1.5V(Max)@IC= 3A
- Good Linearity of hFE
- Complement to Type KSB1017
APPLICATIONS
- Designed for power amplifier applications.
- Recommended for 20~25W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 0.4 A PC Collector Power Dissipation @ Ta=25℃ 2 W Collector Power Dissipation @ TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃
INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 2 isc Silicon NPN Power Transistor KSD1408
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage I C= 50mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage I C= 3A; IB= 0.3A 1.5 V VBE(on) Base-Emitter On Voltage I C= 3A; VCE= 5V 1.5 V ICBO Collector Cutoff Current V CB= 80V; IE= 0 30 μA IEBO Emitter Cutoff Current V EB= 5V; IC= 0 0.1 mA hFE-1 DC Current Gain I C= 0.5A; VCE= 5V 40 240 hFE-2 DC Current Gain I C= 3A; VCE= 5V 15 COB Output Capacitance I E= 0; VCB= 10V; f= 1MHz 90 pF fT Current-Gain—Bandwidth Product I C= 0.5A; VCE= 5V 8 MHz hFE-1 Classifications R O Y 40-80 70-140 120-240