KNX3303A KIA

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90A，30V N-CHANNELMOSFET KNX3303AKIA SEMICONDUCTORS KIA SEMICONDUCTOR S KIA SEMICONDUCTOR S 1.Description ThisPowerMOSFETisproducedusingKIA\`sadvancedplanarstripeDMOStechnology.This advancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperior switchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.These devicesarewellsuitedforhighefficiencyswitchedmodepowersupplies,activepowerfactorcorrection basedonhalfbridgetopology. 2.Features n RDS(on)=3.1mΩ@V GS=10V n Improveddv/dtcapability n Fastswitching n Greendeviceavailable 3.Symbol 1of5 Rev1.1JAN2019 Pin Function

4 Gate

5,6,7,8 Drain 1,2,3 Source

90A，30V N-CHANNELMOSFET KNX3303AKIA SEMICONDUCTORS KIA SEMICONDUCTOR S KIA SEMICONDUCTOR S Rev1.0Sep.2018 4. Orderinginformation PartNumber Package Brand KNG3303A DFN3*3 KIA KNY3303A DFN5*6 KIA 5. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units DFN3*3 DFN5*6 Drain-sourcevoltage VDSS 30 V Gate-sourcevoltage VGSS +20 V Continuousdraincurrent TC=25ºC ID 90* A TC=100ºC 57* A Pulsedraincurrent(note1) TC=25ºC IDP 360* A Avalanchecurrent(note2) IAS 50 A Avalancheenergy,(note2) EAS 125 mJ Maximumpowerdissipation TC=25 ºC PD 43.4 69 W Derateabove25 ºC 0.35 0.55 W/℃ Junction&storagetemperaturerange TJ,TSTG -55-150 ℃ *Draincurrentlimitedbymaximumjunctiontemperature. 6. Thermalcharacteristics Parameter Symbol Rating UnitDFN3*3 DFN5*6 Thermalresistance,Junction-ambient RθJA 95 62 ºC/W Thermalresistance,Junction-case RθJC 2.88 1.81 ºC/W 2of5 Rev1.1JAN2019

90A，30V N-CHANNELMOSFET KNX3303AKIA SEMICONDUCTORS KIA SEMICONDUCTOR S KIA SEMICONDUCTOR S7. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,IDS=250μA 30 - - V BVDSS temperaturecoefficient △BVDSS /△TJ Referenceto25 °C,I D=1mA - 0.03 - V/°C Zerogatevoltagedraincurrent IDSS VDS=30V,V GS=0V,T J=25°C - - 1 μA VDS=24V,V GS=0V,T J=125°C - - 10 Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 1.2 1.6 2.5 V VGS(th) temperaturecoefficient △VGS(th) VDS=VGS,I D=250μA - -5 - mV/°C Gateleakagecurrent IGSS VGS=+20V,V DS=0V - - +100 nA Drain-sourceon-resistance(note3) RDS(on) VGS=10V,ID=24A - 3.1 4 mΩ VGS=4.5V,ID=12A - 4.5 6 Forwardtransconductance gfs VDS=10V,ID=10A - 15.5 - S Gateresistance Rg VDS=0V,V GS=0V,f=1MHz - 2 4 Ω Inputcapacitance Ciss VDS=15V,VGS=0V, f=1MHz - 3070 pFOutputcapacitance Coss - 400 Reversetransfercapacitance Crss - 315 Turn-ondelaytime(note3,4) td(on) VDD=15V,I D=15A, RG=3.3Ω,VGS=10V - 12.6 nS Risetime(note3,4) tr - 19.5 Turn-offdelaytime(note3,4) td(off) - 42.8 Falltime(note3,4) tf - 13.2 Totalgatecharge(note3,4) Qg VDS=15V,V GS=4.5V IDS=24A - 24 nCGate-sourcecharge(note3,4) Qgs - 4.2 Gate-draincharge(note3,4) Qgd - 13 Singlepulseavalancheenergy EAS VDD=25V,L=0.1mH,IAS=24A 31 - - mJ Continuoussourcecurrent IS VGS=VDS=0V,forcecurrent - - 90 A Pulsedsourcecurrent(note3) ISM - - 360 A Diodeforwardvoltage(note3) VSD VGS=0V,IS=1A,TJ=25°C - - 1 V Reverserecoverytime trr VDS=30V,IS=1A, di/dt=100A/μs - - - nS Reverserecoverycharge Qrr - - - nC Note:1:Repetitiverating,pulsewidthlimitedbymaxjunctiontemperature. 2:V DD=25V,V GS=10V,L=0.1mH,I AS=50A,R G=25Ω,startingT J=25°C 3:Thedatatestedbypulsed,pulsewidth ≦300us,dutycycle ≦2% 4:Essentiallyindependentofoperatingtemperature. 3of5 Rev1.1JAN2019

90A，30V N-CHANNELMOSFET KNX3303AKIA SEMICONDUCTORS KIA SEMICONDUCTOR S KIA SEMICONDUCTOR S8.Testcircuitsandwaveforms 4of5 Rev1.1JAN2019

90A，30V N-CHANNELMOSFET KNX3303AKIA SEMICONDUCTORS KIA SEMICONDUCTOR S KIA SEMICONDUCTOR S 5of5 Rev1.1JAN2019