KNX4820B KIA

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Technical content

9.0A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS KNX4820BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1. Description TheKNX4820B-ChannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage, highspeedpowerswitchingapplicationssuchashighefficiencyswitchedmodepowersupplies,active powerfactorcorrection,electroniclampballastsbasedonhalfbridgetopology 2.Features n ProprietaryNewPlanarTechnology n RDS(ON),typ.=250m Ω@VGS=10V n LowGateChargeMinimizeSwitchingLoss n FastRecoveryBodyDiode 3. Pinconfiguration 1of 8 Rev1.0Jan.2018 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

9.0A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS KNX4820BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. OrderingInformation PartNumber Package Brand KNU4820B TO-251 KIA KND4820B TO-252 KIA 5. Absolutemaximumratings TC=25℃ unlessotherwisespecified Parameter Symbol Ratings Unit TO251/TO252 Drain-to-SourceVoltage VDSS 200 VGate-to-SourceVoltage VGSS ±20 ContinuousDrainCurrent ID 9.0 APulsedDrainCurrentatVGS=10V IDM 36 SinglePulseAvalancheEnergy EAS 300 mJ PowerDissipation PD 83 W DeratingFactorabove25 ℃ 0.59 W/ ºC MaximumTemperatureforSoldering Leadsat0.063in(1.6mm)fromCasefor10 seconds,PackageBodyfor10seconds TL 300 ºC OperatingandStorageTemperatureRange TJ&T STG -55to150 Caution:Stressesgreaterthanthoselistedinthe “AbsoluteMaximumRatings ” maycausepermanent damagetothedevice. 6. Thermalcharacteristics Parameter Symbol Ratings UnitsTO251 TO252 Thermalresistance,junction-ambient RθJA 75 ºC/W Thermalresistance,Junction-case RθJC 1.5 2of8 Rev1.0Jan.2018

9.0A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS KNX4820BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. Electricalcharacteristics (TJ=25°C,unlessotherwisenotes) Parameter Symbol Conditions Min Typ Max Units Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 200 - - V Drain-to-sourceLeakageCurrent IDSS VDS=200V,V GS=0V - - 1 μA VDS=160V GS=0V TC=125ºC, - - 10 μA Gate-bodyleakagecurrent IGSS VGS=20V,VDS=0V - - +100 nA VGS=-20V,VDS=0V - - -100 nA Oncharacteristics Staticdrain-sourceon-resistance RDS(on) VGS=10V,ID=4.5A - 250 300 mΩ VGS=4.5V,I D=4.5A - 270 320 mΩ Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 1.0 - 3.0 V ForwardTransconductance gfs VDS=20V,ID=9A - 9.0 - S Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 418 - pF Outputcapacitance Coss - 94 - pF Reversetransfercapacitance Crss - 55 - pF Totalgatecharge Turn-ondelaytime td(on) VDD=100V,ID=9.0A, VGS=10V,RG=12Ω - 7.0 - ns Risetime tr - 6.0 - ns Turn-offdelaytime td(off) - 20 - ns Falltime tf - 6.0 - ns Totalgatecharge Qg VDD=100V,ID=9.0A, VGS=0to10V - 28 - nC Gate-sourcecharge Qgs - 12 - nC Gate-draincharge Qgd - 2.0 - nC Drain-sourcediodecharacteristics Drain-sourcediodeforwardvoltage VSD VGS=0V,Is=9.0A - - 1.5 V Continuousdrain-sourcecurrent [2] ISD Integralpn-diode InMOSFET - - 9 A Pulseddrain-sourcecurrent [2] ISM - - 36 A Reverserecoverytime trr VGS=0V,IF=9.0A dIF/dt=100A/μs - 238 - ns Reverserecoverycharge Qrr - 1.0 - μC Note:[1]TJ=+25 ºCto+150 ºC [2]Pulsewidth ≤380μs;dutycycle ≤2%. 3of8 Rev1.0Jan.2018

9.0A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS KNX4820BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8. TypicalCharacteristics 4of8 Rev1.0Jan.2018

9.0A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS KNX4820BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of8 Rev1.0Jan.2018

9.0A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS KNX4820BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of8 Rev1.0Jan.2018

9.0A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS KNX4820BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of8 Rev1.0Jan.2018

9.0A，200V N-CHANNELMOSFET KIA SEMICONDUCTORS KNX4820BKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8of8 Rev1.0Jan.2018