KNX42150A KIA

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Technical content

2.8A，1500V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX42150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.ProductFeatures n Highspeedswitching n RDS(ON),typ.=6.5Ω@VGS=10V n FullisolatedTO-3PFplasticpackage 2.Applications n Switchingapplications 3. Pinconfiguration TO-3PF 1of5 Rev1.0Aug.2018 Pin Function

1 Gate

2 Drain

3 Source

2.8A，1500V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX42150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. OrderingInformation PartNumber Package Brand KNL42150A TO-3PF KIA 5. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Symbol Parameter Ratings Unit VDSS Drain-to-SourceVoltageT J=25 ºC 1500 VVGSS Gate-to-SourceVoltage ±30 ID ContinuousDrainCurrent@Tc=25 ºC 2.8 AContinuousDrainCurrent@Tc=100 ºC 1.6 IDM PulsedDrainCurrentatV GS=10VLimitedbyT Jmax 10 EAS SinglePulseAvalancheEnergy(V DD=50V) 450 mJ PD MaximumPowerDissipation 63 W TJmax Max.JunctionTemperature 150 ºCTSTG StorageTemperatureRange -55to150 6. Thermalcharacteristics Symbol Parameter Ratings Unit RθJC ThermalResistance,Junction-to-Case 2 ºC/WRθJA ThermalResistance,Junction-to-Ambient 50 2of5 Rev1.0Aug.2018

2.8A，1500V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX42150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. Electricalcharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit BVDSS Drain-to-SourceBreakdownVoltage VGS=0V,I D=1mA 1500 -- -- V RDS(ON) Drain-to-SourceONResistance VGS=0V,I D=1.3A 6.5 9 Ω IDSS Drain-to-SourceLeakageCurrent VDS=1500V,V GS=0V -- -- 10 uA IGSS Gate-to-SourceLeakageCurrent VGS=±20V,V DS=0V -100 -- 100 nA Rgint IntegratedGateResistor -- 2 -- Ω VGS(TH) GateThresholdVoltage VDS=VGS,ID=250uA 3 4 5 V Ciss InputCapacitance VGS=0V, VDS=25V, f=1.0MHZ -- 1500 -- pFCrss ReverseTransferCapacitance -- 11 -- Coss OutputCapacitance -- 88 -- Qg TotalGateCharge VDD=1200V, ID=2.5A, VGS=10V -- 35 -- nCQgs Gate-to-SourceCharge -- 6 -- Qgd Gate-to-Drain(Miller)Charge -- 20 -- td(ON) Turn-onDelayTime VDD=750V, ID=1.25A, RG=4.7Ω VGS=10V (Resistive Load) TJ=25ºC -- 30 -- nS trise RiseTime -- 65 -- td(OFF) Turn-OffDelayTime -- 45 -- tfall FallTime -- 60 -- ISD ContinuousSourceCurrent -- -- 2.8 A VSD ForwardVoltage IS=2.5A,V GS=0V -- - 1.6 V trr Reverserecoverytime VGS=0V,I F=2.5A, diF/dt=-100A/μs -- 410 -- ns Qrr Reverserecoverycharge -- 2280 -- nC 3of5 Rev1.0Aug.2018

2.8A，1500V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX42150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8.Testcircuitsandwaveforms 4of5 Rev1.0Aug.2018

2.8A，1500V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX42150AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.0Aug.2018