KNX3203B KIA

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Technical content

100A，30V N-CHANNELMOSFET KNX3203BKIA SEMICONDUCTORS KIA SEMICONDUCTOR S KIA SEMICONDUCTORS 1.Features n RDS(on)=3.1mΩ@VGS=10V n UsesCRM(CQ)advancedTrenchMOStechnology n Extremelylowon-resistanceR DS(on) n ExcellentQgxR DS(on)product(FOM) n QualifiedaccordingtoJEDECcriteria 2.Applications n Motorcontrolanddrive n Batterymanagement n UPS(UninterrupiblePowerSupplies) 3.Symbol 1of6 Rev1.0JAN2019 Pin Function

1 Gate

2 Drain

3 Source

100A，30V N-CHANNELMOSFET KNX3203BKIA SEMICONDUCTORS KIA SEMICONDUCTOR S KIA SEMICONDUCTORS 4. Orderinginformation PartNumber Package Brand KND3203A TO-252 KIA 5. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDS 30 V Continuousdraincurrent TC=25ºC(Siliconlimit) ID 100 TC=25ºC(Packagelimit) 80 A TC=100ºC(Siliconlimit) 72 A Pulsedraincurrent (TC =25 °C,t p limitedbyT jmax) IDP 320 A Avalancheenergy, singlepulse(L=0.5mH) EAS 90 mJ Gate-Sourcevoltage VGS +20 V Powerdissipation(T C =25 °C) P tot 101 W Operatingjunctionandstoragetemperature TJ,TSTG -55-150 °C 6. Thermalcharacteristics Parameter Symbol Max Unit Thermalresistance,Junction-ambient RθJA 105 ºC/W Thermalresistance,Junction-case RθJC 1.24 ºC/W 2of6 Rev1.0JAN2019

100A，30V N-CHANNELMOSFET KNX3203BKIA SEMICONDUCTORS KIA SEMICONDUCTOR S KIA SEMICONDUCTORS 7. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,IDS=250μA 30 - - V Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 1.3 1.8 2.3 V Zerogatevoltagedraincurrent IDSS VDS=30V,V GS=0V,T J=25°C - - 1 μA VDS=24V,V GS=0V,T J=125°C - - 10 Gate-sourceleakagecurrent IGSS VGS=20V,V DS=0V - - 100 nA Drain-sourceon-resistance RDS(on) VGS=10V,ID=24A,TJ=25°C - 3.1 4.0 mΩ VGS=4.5V,ID=20A - 4.7 7.0 Forwardtransconductance gfs VDS=5V,ID=30A - 73 - S Inputcapacitance Ciss VDS=30V,VGS=0V, f=1MHz - 2340 - pFOutputcapacitance Coss - 460 - Reversetransfercapacitance Crss - 305 - Turn-ondelaytime td(on) VDD=15V,I D=30A, RG_ext=3Ω,VGS=10V - 11 - nS Risetime tr - 102 - Turn-offdelaytime td(off) - 34 - Falltime tf - 95 - Totalgatecharge Qg VDS=15V,V GS=10V ID=30A,f=1MHz - 50 - nCGate-sourcecharge Qgs - 9.5 - Gate-draincharge Qgd - 13.2 - Gateresistance Rg VDS=0V,V GS=0V,f=1MHz - 1.4 - Ω BodyDiodeforwardvoltage VSD VGS=0V,ISD=200A - - 1.3 V BodyDiodeReverseRecoveryTime trr IF=30A, di/dt=100A/μs - 21 - nS BodyDiodeReverseRecovery charge Qrr - 12 - nC 3of6 Rev1.0JAN2019

100A，30V N-CHANNELMOSFET KNX3203BKIA SEMICONDUCTORS KIA SEMICONDUCTOR S KIA SEMICONDUCTORS 8.Testcircuitsandwaveforms 4of6 Rev1.0JAN2019

100A，30V N-CHANNELMOSFET KNX3203BKIA SEMICONDUCTORS KIA SEMICONDUCTOR S KIA SEMICONDUCTORS 5of6 Rev1.0JAN2019

100A，30V N-CHANNELMOSFET KNX3203BKIA SEMICONDUCTORS KIA SEMICONDUCTOR S KIA SEMICONDUCTORS 6of6 Rev1.0JAN2019