KDZ6.8CE KEC

Document overview

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Technical content

  1. 6. 5 1/2 SEMICONDUCTOR TECHNICAL DATA KDZ6.8CE Revision No : 1 ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION AND ESD PROTECTION.

FEATURES

Very small package. High reliability. Transient protection for high-speed data line to IEC61000-4-2(ESD) 15kV(Aiv), 8kV (Contact). Low capacitance. Low leakage current. Zener voltage tolerance :

APPLICATIONS

Constant voltage regulation. ESD protection. Suitable for portable instruments. High-speed data lines. MAXIMUM RATING (Ta=25 ESC DIM MILLIMETERS A B C D E 1.60 0.10 1.20 0.10 0.80 0.10 0.30 0.05 0.60 0.10 CATHODE MARK D C B A E 1. ANODE 2. CATHODE F 0.13 0.05F CHARACTERISTIC SYMBOL RATING UNIT Power Dissipation PD * 150* mW Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Mounted on a glass epoxy circuit board of 20 pad dimension of 4 CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Zener Voltage VZ IZ=5mA 6.650 - 6.930 V Dynamic Impedance ZZ IZ=5mA - - 40 Knee Dynamic Impedance ZZK IZ=0.5mA - - 60 Reverse Current IR VR=3.5V - - 0.5 A Total capacitance Ct VR=0.5V, f=1MHz - - 17 pF VR=2.5V, f=1MHz - - 13 ELECTRICAL CHARACTERISTICS (Ta=25 Type Name Marking ZN

  1. 6. 5 2/2 KDZ6.8CE Revision No : 1 REVERSE CURRNET IR (nA) IR - VR 0.00001 0.0001 1234 0.001 0.01 0.1 100 ZENER CURRENT IZ (mA) 0.01 765 ZENER VOLTAGE VZ (V) REVERSE VOLTAGE (V) VZ - IZ 89 1 0 0.1 POWER DISSIPATION PD (mW) PD - Ta 50 100 150 200 100 150 200 AMBIENT TEMPERATURE Ta ( C) * MOUNTED ON A GLASS EPOXY CIRCUIT BOARD OF 20x20mm PAD DIMENSION OF 4x4mm CAPACITANCE Ct (pF) 210 REVERSE VOLTAGE VR (V) Ct - VR 345 Ta=150 C 75 C 25 C -25 C 150 C 75 C 25 C Ta= -25 C