K5620 KODENSHI

Document overview

K5620 • K5621

DIMENSION (Unit : mm)

These Photocouplers cosist of a Gallium Arsenide Infrared Emitting

Diode and a Silicon NPN PhotoDarlington transistor in a 6-pin package.

(Ta=25℃ )

Parameter		Symbol	Rating	Unit
Input	Forward Current	IF	60	mA
	Reverse Voltage	VR	5	V
	*1 Peak Forward Current	IFP	1	A
	Power Dissipation	PD	150	mW
	Junction Temperature	TJ	125
Output	Collector-Emitter Breakdown Voltage	BVCEO	35	V
	Emitter-Collector Breakdown Voltage	BVECO	6	V
	Collector-Base Breakdown Voltage**	BVCBO	35	V
	Collector Current	IC	50	mA
	Collector Power Dissipation	PC	150	mW
*2 Input to Output Isolation Voltage		Viso	AC5000	Vrms
Storage Temperature		Tstg	-55~+125	℃
Operating Temperature		Topr	-30~+100	℃
*3 Lead Soldering Temperature		Tsol	260	℃
Total Power Dissipation		Ptot	200	mW

\*\* Except for K5620 \*1. Input current with 100㎲ pulse width, 1% duty cycle \*2. Measured at RH=40~60% for 1min \*3. 1/16 inch form case for 10sec

1/3

Parameter		Symbol	Condition	Min.	Typ.	Max.	Unit.
Input	Forward Voltage	VF	IF=10mA	-	1.15	1.30	V
	Reverse Current	IR	V =5V R	-	-	10	㎂
	Capacitance	CT	V=0, f=1MHz	-	30	-	pF
Output	Collector-Emitter Breakdown Voltage	BVCEO	IC=1mA	35	-	-	V
	Emitter-Collector Breakdown Voltage	BVECO	IE=0.1mA	6	-	-	V
	Collector-Base Breakdown Voltage **	BVCBO	I =0.1mA C	35	-	-	V
	Collector Dark Current	ICEO	IF=0, VCE=10V	-	-	100	nA
	Capacitance	CCE	VCE=0, f=1MHz	-	10	-	pF
Coupled	*4 Current Transfer Ratio	CTR	IF=1mA, VCE=2V		500	-	%
	Collector-Emitter Saturation Voltage	VCE(SAT)	IF=1mA, IC=2mA	-	0.85	1.0	V
	Input-Output Capacitance	CIO	V=0, f=1MHz	-	1	-	pF
	Input-Output Isolation Resistance	RIO	RH=40~60%, V=500V	-	1011	-	Ω
	Rise Time	tr	VCE=10V, RL=100Ω IC=2mA	-	100	-	㎲
	Fall Time	tf	VCE=10V, RL=100Ω IC=2mA	-	100	-	㎲