K5610 KODENSHI

Document overview

K5610 • K5611

These Photocouplers consist of a Gallium Arsenide Infrared Emitting

DIMENSION (Unit : mm)

Diode and a Silicon NPN Phototransistor in a 6-pin package.

(Ta=25℃ )

Parameter		Symbol	Rating	Unit
Input	Forward Current	IF	50	mA
	Reverse Voltage	VR	5	V
	*1 Peak Forward Current	IFP	1	A
	Power Dissipation	PD	70	mW
Output	Collector-Emitter Breakdown Voltage	BVCEO	70	V
	Emitter-Collector Breakdown Voltage	BVECO	7	V
	Collector-Base Breakdown Voltage**	BVCBO	80	V
	Collector Current	IC	50	mA
	Collector Power Dissipation	PC	150	mW
*2 Input to Output Isolation Voltage		Viso	AC5000	Vrms
Storage Temperature		Tstg	-55~+125	℃
Operating Temperature		Topr	-30~+100	℃
*3 Lead Soldering Temperature		Tsol	260	℃
Total Power Dissipation		Ptot	200	mW

\*\* Except for K5610 \*1. Input current with 100㎲ pulse width, 1% duty cycle \*2. Measured at RH=40~60% for 1min \*3. 1/16 inch form case for 10sec

1/3

Parameter		Symbol	Condition	Min.	Typ.	Max.	Unit.
Input	Forward Voltage	VF	IF=10mA	-	1.15	1.30	V
	Reverse Current	I R	VR=5V	-	-	10	㎂
	Capacitance	CT	V=0, f=1MHz	-	30	-	pF
Output	Collector-Emitter Breakdown Voltage	BVCEO	IC=1mA	70	-	-	V
	Emitter-Collector Breakdown Voltage	BVECO	IE=0.1mA	7	-	-	V
	Collector-Base Breakdown Voltage **	BVCBO	I =0.1mA C	80	-	-	V
	Collector Dark Current	ICEO	IF=0, VCE=24V	-	-	100	nA
	Capacitance	CCE	VCE=0, f=1MHz	-	10	-	pF
Coupled	*4 Current Transfer Ratio	CTR	IF=5mA, VCE=5V	50	-	600	%
	Collector-Emitter Saturation Voltage	VCE(SAT)	IF=5mA, IC=1mA	-	-	0.3	V
	Input-Output Capacitance	CIO	V=0, f=1MHz	-	1	-	pF
	Input-Output Isolation Resistance	RIO	RH=40~60%, V=500V	-	1011	-	Ω
	Rise Time	tr	VCE=10V, RL=100Ω IC=2mA	-	3	-	㎲
	Fall Time	tf	VCE=10V, RL=100Ω IC=2mA	-	3	-	㎲