2SK559 HITACHI
Document overview
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Technical content
2SK559,2SK560 OO YY AY NF +"AW MOS FET SILICON N-CHANNEL MOS FET aa NT MOS FET ——— ee Os FET BRRBNATYFLIR HIGH SPEED POWER SWITCHING 6.0max. 2802 oo wl rn z 2 yf ts ° fag oY | is 17 = bate : iy 5 2. FUL y Drain 4 i (77% 7)(Flange) Nipper Q6+02 3.» — 2: Source I . (Dimensions in mm) web 0 (TO-3P) MERAH ABSOLUTE MAXIMUM RATINGS (Tz=25°C ) EF + ANRKOS —ABBI ESR Et a Symbol Unit MaxiMuM CHANNEL DISSIPATION = ‘a ete ft S Pree eete pete PP PN — : * SAMS OU, Fa—F 44 FNSE1% #* To=BC BY SMR ** Value at To=250 0 50 100 150
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MERWE ELECTRICAL CHARACTERISTICS (7u=25° ) FON VSR ERAT | Yanass [tenst0ed, tose’ Yais| =] pap [Pe [versa Yes=0 | =| =f of [=] Fo 4 » tf ¥% | dss uA a [= 0] [= Pao Poe ae =e @ Sears ToT Ib=8A, Ves=10V, Ri=3.75Q 7&8 ms oes coer * o & % Mm HS 15A, Ves=0, dir/dt=100A/us | —T soo] =| =| 500] —] as Pet Ts 7 * Pulse Test @ HITACHI 985