2SK3155 HITACHI
Document overview
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Technical content
Features
- Low on-resistance R DS = 100 mW typ.
- High speed switching
- 4 V gate drive device can be driven from 5 V source Outline 1 2 3 TO–220FM 1. Gate 2. Drain 3. Source D G S
Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 150 V Gate to source voltage V GSS –20 V Drain current I D 15 A Drain peak current I D(pulse) Note1 60 A Body-drain diode reverse drain current IDR 15 A Avalanche current I AP Note3 15 A Avalanche energy E AR Note3 16 mJ Channel dissipation Pch Note2 30 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW £ 10 ms, duty cycle £ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ‡ 50 W Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 150 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS –2 0 ——V I G = –100 mA, VDS = 0 Gate to source leak current I GSS —— –10 mAV GS = –16 V, VDS = 0 Zero gate voltege drain current IDSS ——1 0 mAV DS = 150 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.0 — 2.5 V I D = 1 mA, VDS = 10 V Static drain to source on state RDS(on) — 0.10 0.13 W ID = 8 A, VGS = 10 VNote4 resistance R DS(on) — 0.12 0.15 W ID = 8 A, VGS = 4 V Note4 Forward transfer admittance |y fs| 8.5 14 — S I D = 8 A, VDS = 10 V Note4 Input capacitance Ciss — 850 — pF V DS = 10 V Output capacitance Coss — 300 — pF V GS = 0 Reverse transfer capacitance Crss — 160 — pF f = 1 MHz Turn-on delay time t d(on) — 13 — ns I D = 8 A, VGS = 10 V Rise time t r — 100 — ns R L = 3.75 W Turn-off delay time t d(off) — 195 — ns Fall time t f — 110 — ns Body–drain diode forward voltage VDF — 0.9 — V I F = 15 A, VGS = 0 Body–drain diode reverse recovery time trr — 140 — ns I F = 15 A, VGS = 0 diF/ dt = 50 A/ ms Note: 4. Pulse test
0.1 0.3 1 3 10 300100 0 2468 1 0 0 12345 0.2 0.1 Channel Dissipation Pch (W) Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V)DS Drain Current I (A)D Maximum Safe Operation Area Drain to Source Voltage V (V)DS Drain Current I (A)D Typical Output Characteristics Gate to Source Voltage V (V)GS Drain Current I (A)D Typical Transfer Characteristics 3.5 V 5 V 4 V 3 V V = 2.5 VGS Pulse Test10 V Tc = –25°C 25°C V = 10 V Pulse Test DS 75°C 500 0.5 0.05 30 1000 µs1 ms 100 µs DC Operation (Tc = 25 °C) Ta = 25°C Operation in this area is limited by R DS(on) PW = 10 ms(1shot)
0 48 12 16 20 30 100 11 0 3 0.5 0.4 0.3 0.2 0.1 –40 0 40 80 120 160 0.1 0.2 1 52 0 300 0.3 0.1 1.0 0.2 0.5 0.1 0.02 0.01 0.05 Gate to Source Voltage V (V)GS Drain to Source Saturation Voltage vs. Gate to Source Voltage V (V)DS(on) Drain to Source Saturation Voltage Drain Current I (A)D Drain to Source On State Resistance R ( )ΩDS(on) Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc (°C) R ( )DS(on) Static Drain to Source on State Resistance Ω Static Drain to Source on State Resistance vs. Temperature Drain Current I (A)D Forward Transfer Admittance |y | (S)fs Forward Transfer Admittance vs. Drain Current Pulse Test 10 A I = 15 AD Pulse Test 100 5 A I = 10 AD V = 4 VGS 10 V 5 A
10 A 5 A
0.1 0.3 V = 4 VGS 10 V Pulse Test 1000 0.5 2 50 100 V = 10 V Pulse Test DS 25 °C Tc = –25 °C 75 °C
0.1 0.5 1 2 100.2 5 01 0 2 0 3 0 4 05 0 10000 1000 3000 300 100 200 160 120 20 40 60 80 100 1000 200 100 0.1 0.2 1 5 10 500 200 100 I = 15AD V GS V DS 0.5 2 Reverse Drain Current I (A)DR Reverse Recovery Time trr (ns) Body–Drain Diode Reverse Recovery Time Capacitance C (pF) Drain to Source Voltage V (V)DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Drain to Source Voltage V (V)DS Gate to Source Voltage V (V)GS Dynamic Input Characteristics Drain Current I (A)D Switching Time t (ns) Switching Characteristics di / dt = 50 A / µs V = 0, Ta = 25 °CGS V = 100 V 50 V 25 V DD V = 100 V 50 V 25 V DD V = 0 f = 1 MHz GS Ciss Coss Crss 500 rt V = 10 V, V = 30 V PW = 5 µs, duty < 1 % GS DD tf d(on)t d(off)t
10 V V = 0, –5 VGS
I = 15 A V = 50 V duty < 0.1 % Rg > 50 AP DD Ω Channel Temperature Tch (°C) Repetitive Avalanche Energy E (mJ)AR Maximun Avalanche Energy vs. Channel Temperature Derating Source to Drain Voltage V (V)SD Reverse Drain Current I (A)DR Reverse Drain Current vs. Source to Drain Voltage Pulse Test 5 V D. U. TRg I Monitor AP V Monitor DS VDD 50ΩVin 15 V ID V DS IAP V (BR)DSS L VDD E = • L • I •2 1 V V – VAR AP DSS DSS DD Avalanche Test Circuit Avalanche Waveform
D.U.T. Vin 10 V R L V = 30 V DD trtd(on) Vin 90% 90% 10% 10%Vout td(off) Vout Monitor 50Ω 90% 10% tf Switching Time Test Circuit Waveform Pulse Width PW (S) Normalized Transient Thermal Impedance s (t)γ Normalized Transient Thermal Impedance vs. Pulse Width 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 DMP PW T D = PW T ch – c(t) = s (t) • ch – c ch – c = 4.17°C/W, Tc = 25°C θ γ θ θ Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse
Unit: mm 10.0 ± 0.3 7.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 0.7 ± 0.1 5.0 ± 0.3 2.0 ± 0.3 12.0 ± 0.3 2.8 ± 0.2 2.5 ± 0.2 4.45 ± 0.3 2.7 0.6 0.5 ± 0.1 3.2 ± 0.2φ Hitachi Code EIAJ JEDEC TO–220FM SC–67
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