2SK2828 HITACHI
Document overview
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Technical content
Features
- Low on-resistance
- High speed switching
- Low drive current
- No secondary breakdown
- Suitable for switching regulator and DC–DC converter
- Avalanche ratings Outline TO–3P 1. Gate 2. Drain (Flange) 3. Source 2 3 D S G
Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 700 V Gate to source voltage V GSS –30 V Drain current I D 12 A Drain peak current I D(pulse)*1 48 A Body-drain diode reverse drain current IDR 12 A Channel dissipation Pch* 2 175 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW £ 10ms, duty cycle £ 1 % 2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 700 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS –3 0 ——V I G = –100mA, VDS = 0 Gate to source leak current I GSS —— –10 mAV GS = –25V, VDS = 0 Zero gate voltege drain current IDSS — — 100 mAV DS = 560 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 3.0 V I D = 1mA, VDS = 10V*3 Static drain to source on state resistance R DS(on) — 0.9 1.2 W ID = 6A, VGS = 10V*3 Forward transfer admittance |y fs| 5.5 9.0 — S I D = 6A, VDS = 10V*3 Input capacitance Ciss — 1850 — pF V DS = 10V Output capacitance Coss — 400 — pF V GS = 0 Reverse transfer capacitance Crss — 45 — pF f = 1MHz Total gate charge Qg — 35 — nc V DD = 400V Gate to source charge Qgs — 8 — nc V GS = 10V Gate to drain charge Qgd — 10 — nc I D = 12A Turn-on delay time t d(on) — 25 — ns I D = 6A, RL = 5W Rise time t r — 65 — ns V GS = 10V Turn-off delay time t d(off) — 140 — ns Fall time t f —5 5—n s Body–drain diode forward voltage VDF — 0.95 — V I F = 12A, VGS = 0 Body–drain diode reverse recovery time trr — 2.5 — msI F = 12A, VGS = 0 diF/ dt =100A/ms Note: 3. Pulse test
0.5 105 20 50 100 500 1000 0 10 20 30 40 50 0 2468 1 0 0.2 0.1 200 10 µs 100 µs 1 msPW = 10 ms (1shot) DC Operation (Tc = 25°C) Ta = 25 °C 10 V V = 4 VGS 6 V 8 V 5 V
4.5 V Tc = 75°C
25°C –25°C Channel Dissipation Pch (W) Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V)DS Drain Current I (A)D Maximum Safe Operation Area Drain to Source Voltage V (V)DS Drain Current I (A)D Typical Output Characteristics Gate to Source Voltage V (V)GS Typical Transfer Characteristics Operation in this area is limited by R DS(on) Pulse Test V = 10 V Pulse Test DS Drain Current I (A)D
0 48 12 16 20 1 5 20 100 21 0 5 0 0.5 0.2 0.1 4.0 3.2 2.4 1.6 0.8 –40 0 40 80 120 160 0.2 1 2 10 20 0.5 I = 10 AD 5 A I = 10 AD V = 10 VGS 5 A 0.5 5 0.05 V = 10, 15VGS 25 °C Tc = –25 °C 75 °C Gate to Source Voltage V (V)GS Drain to Source Saturation Voltage vs. Gate to Source Voltage V (V)DS(on) Drain to Source Saturation Voltage Drain Current I (A)D Drain to Source On State Resistance R ( )WDS(on) Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc (°C) R ( )DS(on) Static Drain to Source on State Resistance W Static Drain to Source on State Resistance vs. Temperature Drain Current I (A)D Forward Transfer Admittance |y | (S)fs Forward Transfer Admittance vs. Drain Current Pulse Test Pulse Test V = 10 V Pulse Test DS Pulse Test
0.1 0.2 1 2 10 20 50 0.05 0.2 0.5 0.1 01 0 2 0 3 0 4 05 0 2000 5000 1000 100 200 500 1000 800 600 400 200 20 40 60 80 100 200 500 100 0.1 0.3 1 3 10 30 100 V = 100 V 250 V 400 V DD V = 400 V 250 V 100 V DD 0.5 5 di / dt = 100 A / µs V = 0, Ta = 25 °CGS V = 0 f = 1 MHz GS Ciss Coss Crss tf rt d(on)t d(off)t V = 10 V, V = 30 V PW = 5 µs, duty < 1 % GS DD Reverse Drain Current I (A)DR Reverse Recovery Time trr (ns) Body–Drain Diode Reverse Recovery Time Capacitance C (pF) Drain to Source Voltage V (V)DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Drain to Source Voltage V (V)DS Gate to Source Voltage V (V)GS Dynamic Input Characteristics Drain Current I (A)D Switching Time t (ns) Switching Characteristics ID = 12 A VGS VDS
0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 DMP PW T D = PW T ch – c(t) = s (t) • ch – c ch – c = 0.71 °C/W, Tc = 25 °C q g q q Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse V = 0, –5 VGS Source to Drain Voltage V (V)SD Reverse Drain Current I (A)DR Reverse Drain Current vs. Source to Drain Voltage Pulse Width PW (S) Normalized Transient Thermal Impedance s (t)g Normalized Transient Thermal Impedance vs. Pulse Width Pulse Test
D.U.T. Vin 10 V R L V = 30 V DD trtd(on) Vin 90% 90% 10% 10%Vout td(off) Vout Monitor 50W 90% 10% tf Switching Time Test Circuit Switching Time Waveform
Unit: mm 16.0 max 1.0 ± 0.2 1.0 typ 3.2 ± 0.2f 20.1 max18.0 ± 0.5 2.0 typ 0.5 typ 1.4 max 2.0 typ 0.9 typ 1.0 typ 3.6 typ 5.0 max 0.3 typ 1.5 typ 2.8 typ 0.6 ± 0.2 1.6 typ Hitachi Code EIAJ JEDEC TO–3P SC–65
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