K201 KODENSHI

Document overview

  • PDF pages: 3

Technical content

Page 1

K201 • K202 • K204

These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes connected in a reverse-paralled configuration for AC-input and a Silicon NPN Phototransistor per a channel. The K201 has one channel in a 4-pin mini-flat SMD package. The K202 has two channels in a 8-pin mini-flat SMD package. The K204 has four channels in a 16-pin mini-flat SMD package.

FEATURES

  • Mini-flat Package
  • Collector-Emitter Voltage : Min.50V
  • Current Transfer Ratio : 50% Min. (at IF= ± 5mA, VF=5V)
  • Electrical Isolation Voltage : AC3750Vrms

APPLICATIONS

  • AC Signal Input
  • Interface between two circuits of difference Potentail
  • Cordless Phone
  • Programmable Logic Control

DIMENSION (Unit : mm)

K 2 0 1 3 0.2 4.4 1 2 Orientation Mark 7.0 0.5 3.6 0.2 5.2 0.2 0.05 0.2 0.15 2.5 0.4 0.1 0.4Min. 0.1 0.1 2.54 0.25 K202 8 7 6 5 0.2 4.4 1 2 3 4 Orientation Mark 7.0 0.5 8.7 0.2 5.2 0.2 0.2 2.5 0.4Min. 0.05 2.54 2.54 0.15
K204 16 15 14 13 12 11 10 9 0.2 4.4 1 2 3 4 5 6 7 8 Orientation Mark 7.0 0.5 18.8 0.2 5.2 0.2 0.2 2.5 0.4Min. 0.1 0.05 2.54 2.54 0.1 0.15

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Page 2

K201 • K202 • K204

MAXIMUM RATINGS

(Ta=25℃ )

Parameter Symbol Rating Unit
Input Forward Current IF ± 50 mA
Peak Forward Current*1 IFP ± 1 A
Power Dissipation PD 70 mW
Output Collector-Emitter Breakdown Voltage BVCEO 50 V
Emitter-Collector Breakdown Voltage BVECO 6 V
Collector Current IC 50 mA
Collector Power Dissipation PC 150 mW
Input to Output Isolation Voltage*2 Viso AC3750 Vrms
Storage Temperature Tstg -55~+125 ℃
Operating Temperature Topr -30~+100 ℃
Lead Soldering Temperature*3 Tsol 260 ℃
Total Power Dissipation Ptot 200 mW

\*1. Input current with 100µs pulse width, 1% duty cycle \*2. Measured at RH=40~60% for 1min \*3. 1/16 inch form case for 10sec

ELECTRO-OPTICAL CHARACTERISTICS

(Ta=25℃ , unless otherwise noted)

Parameter Symbol Condition Min. Typ. Max. Unit.
Input Forward Voltage VF IF= ± 10mA - 1.15 1.30 V
Capacitance CT V=0, f=1kHz - 30 - pF
Output Collector-Emitter Breakdown Voltage BVCEO IC=0.5mA 50 - - V
Emitter-Collector Breakdown Voltage BVECO IE=0.1mA 6 - - V
Collector Dark Current ICEO IF=0, VCE=24V - - 100 nA
Capacitance CCE VCE=0, f=1MHz - 10 - pF
Coupled Current Transfer Ratio*4 CTR IF= ± 5mA, VCE=5V 50 - 600 %
Collector-Emitter Saturation Voltage VCE(SAT) IF= ± 5mA, IC=1mA - 0.15 0.4 V
Input-Output Capacitance CIO V=0, f=1KHz - 1 - pF
Input-Output Isolation Resistance RIO RH=40~60%, V=500V - 1011 - Ω
Rise Time tr VCE=5V, RL=100Ω IC=2mA - 4 - ㎲
Fall Time tf - 4 - ㎲
Symmetry Ratio CTR1/CTR2 1 - 3

\*4. CTR=(IC/IF) X 100 (%)

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Page 3

K201 • K202 • K204

Forward Current vs.

Collector Power Dissipation vs.

Ambient Temperature

Ambient Temperature

PDF page 3 diagram
PDF page 3 diagram

Ambient Temperature Ta (℃)

Ambient Temperature Ta (℃ )

Collector Current vs.

Dark Current vs.

Collector-Emitter Voltage

Ambient Temperature

PDF page 3 diagram
PDF page 3 diagram

Collector-Emitter Voltage VCE (V)

Ambient Temperature Ta (℃ )

Collector Current vs.

Response Time vs.

Forward Current

Load Resistance

PDF page 3 diagram
PDF page 3 diagram

Forward Current IF (mA)

Load Resistance RL (㏀)

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Forward Current vs. Forward Voltage

PDF page 3 diagram

Forward Voltage VF (V)

Collector Current vs. Ambient Temperature

PDF page 3 diagram

Ambient Temperature Ta (℃ )

Switching Time Test Circuit

PDF page 3 diagram

Input

Output 10%

90% tr

tf

Waveform