2SK1464 ISC

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 1 isc N-Channel MOSFET Transistor 2SK1464

DESCRIPTION

  • Drain Current –ID=8A@ TC=25℃
  • Drain Source Voltage- : V DSS=900 (Min)

APPLICATIONS

  • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNI T VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 8 A Ptot Total Dissipation@TC=25℃ 80 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ PDF pdfFactory Pro www.fineprint.cn

INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn isc & iscsemi is registered trademark 2 isc N-Channel Mosfet Transistor 2SK1464

  • ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage V GS=0; ID= 10mA 900 V VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA 2.0 3.0 V RDS(on) Drain-Source On-stage Resistance VGS=10V; ID=4A 1.2 1.6 Ω IGSS Gate Source Leakage Current VGS= ±30V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain Current VDS=900V; VGS= 0 1 mA VSD Diode Forward Voltage IF=8A; VGS=0 1.8 V tr Rise time VGS=10V;ID=4A;RL=50Ω 80 ns ton Turn-on time 100 ns tf Fall time 150 ns toff Turn-off time 500 ns PDF pdfFactory Pro www.fineprint.cn