2SK1341 RENESAS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

  • Low on-resistance
  • High speed switching
  • Low drive current
  • No secondary breakdown
  • Suitable for switching regulator and DC-DC converter Outline (Package name: TO-3P) 1. Gate 2. Drain (Flange) 3. Source D G 2 3

Rev.2.00 Sep 07, 2005 page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS 900 V Gate to source voltage V GSS ±30 V Drain current I D 6 A Drain peak current I D(pulse) *1 15 A Body to drain diode reverse drain current I DR 6 A Channel dissipation Pch *2 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at T C = 25°C

Electrical Characteristics

(Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V (BR)DSS 900 — — V I D = 10 mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±30 — — V I G = ±100 µA, VDS = 0 Gate to source leak current I GSS — — ±10 µA V GS = ±25 V, VDS = 0 Zero gate voltage drain current I DSS — — 250 µA V DS = 720 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.0 — 3.0 V I D = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 2.0 3.0 Ω I D = 3 A, VGS = 10 V *3 Forward transfer admittance |y fs| 2.3 3.7 — S I D = 3 A, VDS = 20 V *3 Input capacitance Ciss — 980 — pF Output capacitance Coss — 400 — pF Reverse transfer capacitance Crss — 195 — pF VDS = 10 V, VGS = 0, f = 1 MHz Turn-on delay time t d(on) — 20 — ns Rise time t r — 80 — ns Turn-off delay time t d(off) — 125 — ns Fall time t f — 100 — ns ID = 3 A, VGS = 10 V, RL = 10 Ω Body to drain diode forward voltage V DF — 0.9 — V I F = 6 A, VGS = 0 Body to drain diode reverse recovery time trr — 1000 — ns I F = 6 A, VGS = 0, diF/dt = 100 A/µs Note: 3. Pulse test

Rev.2.00 Sep 07, 2005 page 3 of 6 Main Characteristics 150 100 0 50 100 150 Case Temperature TC (°C) Channel Dissipation Pch (W) Power vs. Temperature Derating 1,000 Drain to Source Voltage VDS (V) Drain Current ID (A) Maximum Safe Operation Area 0.5 0.2 0.1 0.05 3 10 30 100 300 100 µs1 ms DC Operatio n (T C = 25 °C) PW = 10 ms (1 Shot) µs Ta = 25°C Operation in this area is limited by R DS (on) 20 50 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 30 400 Drain Current ID (A) Pulse Test VGS = 4 V 10 V 6 V 5.5 V 5 V 4.5 V 41 0 Gate to Source Voltage VGS (V) Drain Current ID (A) Typical Transfer Characteristics 26 80 VDS = 20 V Pulse Test Ta = 25°C 75°C –25°C 82 0 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) 41 2 1 60 Drain to Source Saturation Voltage vs. Gate to Source Voltage ID = 5 A 2 A 1 A Pulse Test Drain Current ID (A) Static Drain to Source on State Resistance RDS (on) (Ω) 0.2 Static Drain to Source on State Resistance vs. Drain Current 0.5 1 2 5 10 0.5 Pulse Test 15 V VGS = 10 V

Rev.2.00 Sep 07, 2005 page 4 of 6 40 160 Case Temperature TC (°C) Static Drain to Source on State Resistance RDS (on) (Ω) 0 80 120 Static Drain to Source on State Resistance vs. Temperature –40 ID = 5 A VGS = 10 V Pulse Test 1 A 2 A Drain Current ID (A) Forward Transfer Admittance yfs (S) Forward Transfer Admittance vs. Drain Current 0.05 0.1 0.2 0.5 1 2 0.5 0.2 0.1 VDS = 20 V Pulse Test –25°C TC = 25°C 75°C 5,000 Reverse Drain Current IDR (A) Reverse Recovery Time trr yfs (ns) Body to Drain Diode Reverse Recovery Time 0.1 2,000 1,000 500 200 100 0.2 0.5 1 2 5 di/dt = 100 A/µs, Ta = 25°C VGS = 0 Pulse Test 10,000 20 50 Drain to Source Voltage VDS (V) Capacitance C (pF) 10 30 40 Typical Capacitance vs. Drain to Source Voltage 1,000 100 Crss Coss Ciss VGS = 0 f = 1 MHz 1,000 40 100 Gate Charge Qg (nc) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 800 200 20 60 800 400 600 Gate to Source Voltage VGS (V) VDD = 250 V 400 V

600 V ID = 6 A

VDD = 250 V 500 Drain Current ID (A) Switching Time t (ns) 0.1 Switching Characteristics 200 100 0.2 0.5 1 2 5 VGS = 10 V, VDD 30 V PW = 2 µs, duty < 1% =.. td (off) tf td (on) tr

Rev.2.00 Sep 07, 2005 page 5 of 6 0.8 2.0 Source to Drain Voltage VSD (V) Reverse Drain Current IDR (A) 8 0.4 1.2 1.6 Reverse Drain Current vs. Source to Drain Voltage Pulse Test VGS = 0, –5 V

5 V, 10 V

Pulse Width PW (S) Normalized Transient Thermal Impedance γS (t) 1.0 0.1 0.3 10 µ 0.03 0.01 100 µ 10 m 100 m 1 101 m Normalized Transient Thermal Impedance vs. Pulse Width PW PDM D = T PW θch–c (t) = γS (t) • θch–c θch–c = 1.25°C/W, TC = 25°C T TC = 25°CD = 1 0.5 0.2 0.1 0.05 0.02 0.01

1 Shot Pulse

Switching Time Test Circuit Vin Monitor Vout Monitor RL D.U.T 50 Ω Vin 10 V Vout Waveforms td (on) 10% 10% 90% 90% 10% 90% Vin tr td (off) tf VDD = 30 V

Rev.2.00 Sep 07, 2005 page 6 of 6 Package Dimensions φ3.2 ± 0.2 4.8 ± 0.2 1.5 0.3 2.8 0.6 ± 0.21.0 ± 0.2 15.6 ± 0.3 0.5 1.0 5.0 ± 0.3 1.6 1.4 Max 2.0 2.0 14.9 ± 0.2 3.6 0.9 1.0 Package Name PRSS0004ZE-A TO-3P / TO-3PV MASS[Typ.] 5.0gSC-65 RENESAS CodeJEITA Package Code Unit: mm

Ordering Information

Part Name Quantity Shipping Container 2SK1341-E 500 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.

Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan http://www.renesas.com Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Renesas Technology Singapore Pte. Ltd.

1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632

Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 RENESAS SALES OFFICES © 2005. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .3.0