Download PDFK101 KODENSHI
Document overview
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Technical content
Page 1
Photocoupler
K101 • K102 • K104
These Photocouplers consist of a Gallium Arsenide Infrared Emitting Diode and a Silicon NPN Phototransistor per a channel. The K101 has one channel in a 4-pin mini-flat SMD package. The K102 has two channels in a 8-pin mini-flat SMD package. The K104 has four channels in a 16-pin mini-flat SMD package.
FEATURES
- Mini-Flat Package
- Collector-Emitter Voltage : Min.50V
- Current Transfer Ratio : Min.50% (at IF=5mA, VCE=5V)
- Electrical Isolation Voltage : AC3750Vrms
APPLICATIONS
- Interface between two circuits of different potential
- Cordless Phone
- Programmable Logic Control
- Microcomputer
DIMENSION (Unit : mm)
| K 1 0 1 4 3 0.2 4.4 1 2 Orientation Mark 7.0 0.5 3.6 0.2 5.2 0.2 0.05 0.2 0.15 2.5 0.4 0.1 0.4Min. 0.1 0.1 2.54 0.25 | K102 8 7 6 5 0.2 4.4 1 2 3 4 Orientation Mark 7.0 0.5 8.7 0.2 5.2 0.2 0.2 2.5 0.4Min. 0.05 2.54 2.54 0.15 |
|---|---|
| K104 16 15 14 13 12 11 10 9 0.2 4.4 1 2 3 4 5 6 7 8 Orientation Mark 7.0 0.5 18.8 0.2 5.2 0.2 0.2 2.5 0.4Min. 0.1 0.05 2.54 2.54 0.1 0.15 | |
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Page 2
Photocoupler
K101 • K102 • K104
MAXIMUM RATINGS
(Ta=25℃ )
| Parameter | Symbol | Rating | Unit | |
|---|---|---|---|---|
| Input | Forward Current | IF | 50 | mA |
| Reverse Voltage | VR | 5 | V | |
| Peak Forward Current*1 | IFP | 1 | A | |
| Power Dissipation | PD | 70 | mW | |
| Output | Collector-Emitter Breakdown Voltage | BVCEO | 50 | V |
| Emitter-Collector Breakdown Voltage | BVECO | 6 | V | |
| Collector Current | IC | 50 | mA | |
| Collector Power Dissipation | PC | 150 | mW | |
| Input to Output Isolation Voltage*2 | Viso | AC3750 | Vrms | |
| Storage Temperature | Tstg | -55~+125 | ℃ | |
| Operating Temperature | Topr | -30~+100 | ℃ | |
| Lead Soldering Temperature*3 | Tsol | 260 | ℃ | |
| Total Power Dissipation | Ptot | 200 | mW | |
\*1. Input current with 100µs pulse width, 1% duty cycle \*2. Measured at RH=40~60% for 1min \*3. 1/16 inch form case for 10sec
ELECTRO-OPTICAL CHARACTERISTICS
(Ta=25℃ , unless otherwise noted)
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit. | |
|---|---|---|---|---|---|---|---|
| Input | Forward Voltage | VF | IF=10mA | - | 1.15 | 1.30 | V |
| Reverse Current | IR | VR=5V | - | - | 10 | ㎂ | |
| Capacitance | CT | V=0, f=1MHz | - | 30 | - | pF | |
| Output | Collector-Emitter Breakdown Voltage | BVCEO | IC=0.5mA | 50 | - | - | V |
| Emitter-Collector Breakdown Voltage | BVECO | IE=0.1mA | 6 | - | - | V | |
| Collector Dark Current | ICEO | IF=0, VCE=24V | - | - | 100 | nA | |
| Capacitance | CCE | VCE=0, f=1MHz | - | 10 | - | pF | |
| Coupled | Current Transfer Ratio*4 | CTR | IF=5mA, VCE=5V | 50 | - | 600 | % |
| Collector-Emitter Saturation Voltage | VCE(SAT) | IF=5mA, IC=1mA | - | 0.15 | 0.4 | V | |
| Input-Output Capacitance | CIO | V=0, f=1MHz | - | 1 | - | pF | |
| Input-Output Isolation Resistance | RIO | RH=40~60%, V=500V | - | 1011 | - | Ω | |
| Rise Time | tr | VCE=5V, RL=100 IC=2mA | - | 3 | - | ㎲ | |
| Fall Time | tf | - | 3 | - | ㎲ | ||
\*4. CTR=(IC/IF) X 100 (%)
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Page 3
Photocoupler
K101 • K102 • K104
Forward Current vs.
Collector Power Dissipation vs.
Ambient Temperature
Ambient Temperature
Ambient Temperature Ta (℃ )
Ambient Temperature Ta (℃ )
Collector Current vs.
Dark Current vs.
Collector-Emitter Voltage
Ambient Temperature
Collector-Emitter Voltage VCE (V)
Ambient Temperature Ta (℃ )
Collector Current vs.
Response Time vs.
Forward Current
Load Resistance
Forward Current IF (mA)
Load Resistance RL (㏀)
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Forward Current vs. Forward Voltage
Forward Voltage VF (V)
Collector Current vs. Ambient Temperature
Ambient Temperature Ta (℃ )
Switching Time Test Circuit
Input
Output 10%
90% tr tf
Wave form