2SJ550 RENESAS

Document overview

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  • PDF pages: 9

Technical content

Features

  • Low on-resistance RDS (on) = 0.075 Ω typ.
  • Low drive current.
  • 4 V gate drive devices.
  • High speed switching. Outline (Package name: LDPAK (L) ) (Package name: LDPAK (S)-(1) ) 1. Gate 2. Drain 3. Source 4. Drain D G S 1 2 3 1 2 3

2SJ550(L), 2SJ550(S) Rev.3.00 Sep 07, 2005 page 2 of 8 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Drain to source voltage V DSS –60 V Gate to source voltage V GSS ±20 V Drain current I D –15 A Drain peak current I D (pulse) Note 1 –60 A Body to drain diode reverse drain current I DR –15 A Avalanche current I AP Note 3 –15 A Avalanche energy E AR Note 3 19 mJ Channel dissipation Pch Note 2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω

Electrical Characteristics

(Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR) DSS –60 — — V I D = –10 mA, VGS = 0 Gate to source breakdown voltage V (BR) GSS ±20 — — V I G = ±100 µA, VDS = 0 Zero gate voltage drain current I DSS — — –10 µA V DS = –60 V, VGS = 0 Gate to source leak current I GSS — — ±10 µA V GS = ±16 V, VDS = 0 Gate to source cutoff voltage V GS (off) –1.0 — –2.0 V I D = –1 mA, VDS = –10 V RDS (on) — 0.075 0.095 Ω I D = –8 A, VGS = –10 V Note 4 Static drain to source on state resistance RDS (on) — 0.105 0.155 Ω I D = –8 A, VGS = –4 V Note 4 Forward transfer admittance |y fs| 6.5 11 — S I D = –8 A, VDS = –10 V Note 4 Input capacitance Ciss — 850 — pF Output capacitance Coss — 420 — pF Reverse transfer capacitance Crss — 110 — pF VDS = –10 V VGS = 0 f = 1 MHz Turn-on delay time t d (on) — 12 — ns Rise time t r — 75 — ns Turn-off delay time t d (off) — 125 — ns Fall time t f — 75 — ns VGS = –10 V ID = –8 A RL = 3.75 Ω Body to drain diode forward voltage V DF — –1.1 — V I F = –15 A, VGS = 0 Body to drain diode reverse recovery time t rr — 70 — ns I F = –15 A, VGS = 0 diF/dt = 50 A/µs Note: 4. Pulse test

2SJ550(L), 2SJ550(S) Rev.3.00 Sep 07, 2005 page 3 of 8 Main Characteristics Channel Dissipation Pch (W) Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage VDS (V) Drain Current ID (A) Typical Output Characteristics Gate to Source Voltage VGS (V) Drain Current ID (A) Typical Transfer Characteristics –20 –12 –16 –20 –12 –16 Tc = 75°C 0 50 100 150 200 VDS = –10 V Pulse Test –10 V –6 V –4 V –3.5 V –3 V VGS = –2.5 V Pulse Test Drain to Source Voltage VDS (V) Drain Current ID (A) Maximum Safe Operation Area 100 300 0.3 0.1 0.1 0.3 1 3 10 30 100 1000 Ta = 25°C PW = 10 ms (1 shot) DC Operation (Tc = 25°C)1 ms 10 µs 100 µs Operation in this area is limited by R DS (on) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –4.0 –0.8 –1.6 –2.4 –3.2 Pulse Test ID = –15 A –10 A –5 A Drain Current ID (A) Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Drain Current 0.3 0.03 0.1 0.01 VGS = –4 V –10 V Pulse Test –25°C 25°C

2SJ550(L), 2SJ550(S) Rev.3.00 Sep 07, 2005 page 4 of 8 0.40 –40 0 40 80 120 160 Case Temperature Tc (°C) 0.08 0.16 0.24 0.32 Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature Pulse Test ID = –15 A ID = –15 A Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 100 0.3 0.1 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Reverse Recovery Time trr (ns) Body-Drain Diode Reverse Recovery Time 500 100 200 10 di / dt = 50 A / µs VGS = 0, Ta = 25°C Capacitance C (pF) Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 10000 1000 3000 300 100 Ciss Coss Crss VGS = 0 f = 1 MHz Gate Charge Qg (nc) Drain to Source Voltage VDS (V) –20 –16 –12 –100 –80 –60 –40 –20 Gate to Source Voltage VGS (V) Dynamic Input Characteristics 81 6 2 4 3 2 4 0 VDS VGS 1000 200 500 100 tf tr td(off) td(on) Drain Current ID (A) Switching Time t (ns) Switching Characteristics VDD = –10 V –25 V –50 V VDD = –50 V –25 V –10 V –10 V VGS = –4 V –10 A –5 A –5 A, –10 A, –15 A VGS = –10 V, VDD = –30 V PW = 5 µs, duty ≤ 1 %

2SJ550(L), 2SJ550(S) Rev.3.00 Sep 07, 2005 page 5 of 8 Source to Drain Voltage VSD (V) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage 25 50 75 100 125 150 Channel Temperature Tch (°C) Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating IAP = –15 A VDD = –25 V duty < 0.1 % Rg ≥ 50 Ω –20 –12 –16 –2.0 Pulse Test –5 V VGS = 0, 5 V –10 V Avalanche Test Circuit Avalanche Waveform ID VDS IAP V(BR)DSS VDD EAR =  L  IAP2 2

1 VDSS

VDSS – VDD D.U.TRg IAP Monitor VDS Monitor VDD 50 ΩVin –15 V L Pulse Width PW (S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance γ s (t) 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pul se PDM PW T D = PW T θch – c (t) = γ s (t)  θch – c θch – c = 2.5°C/W, Tc = 25°C

2SJ550(L), 2SJ550(S) Rev.3.00 Sep 07, 2005 page 6 of 8 trtd(on) Vin 90% 90% 10% 10%Vout td(off) 90% 10% tf Switching Time Test Circuit Waveform Vin Monitor D.U.T. Vin –10 V RL Vout Monitor 50 Ω VDD = –30 V

2SJ550(L), 2SJ550(S) Rev.3.00 Sep 07, 2005 page 7 of 8 Package Dimensions 10.2 ± 0.3 0.86 0.76 ± 0.1 + 0.2 – 0.1 1.3 ± 0.2 4.44 ± 0.2 1.3 ± 0.15 2.49 ± 0.2 0.4 ± 0.1 11.0 ± 0.5 8.6 ± 0.3 10.0 11.3 ± 0.5 + 0.3 – 0.5 (1.4) 1.37 ± 0.2 Package Name PRSS0004AE-A LDPAK(L) / LDPAK(L)V MASS[Typ.] 1.40g RENESAS CodeJEITA Package Code Unit: mm 10.2 ± 0.3 1.37 ± 0.2 (1.5) (1.4)8.6 ± 0.3 10.0 + 0.3 – 0.5 4.44 ± 0.2 1.3 ± 0.15 0.1 + 0.2 – 0.1 0.4 ± 0.1 2.49 ± 0.2 0.86 + 0.2 – 0.1 1.3 ± 0.2 3.0 + 0.3 – 0.5 (1.5) 7.8 6.6 2.2 1.7 7.8 7.0 SC-83 1.30g MASS[Typ.] LDPAK(S)-(1) / LDPAK(S)-(1)VPRSS0004AE-B RENESAS CodeJEITA Package Code Package Name Unit: mm

2SJ550(L), 2SJ550(S) Rev.3.00 Sep 07, 2005 page 8 of 8

Ordering Information

Part Name Quantity Shipping Container 2SJ550L-E 500 pcs Box (Sack) 2SJ550STL-E 1000 pcs Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.

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