2SJ550 HITACHI
Document overview
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Technical content
Features
- Low on-resistance R DS(on) = 0.075W typ.
- Low drive current.
- 4V gate drive devices.
- High speed switching. Outline 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 1 2 3 LDPAK D G S
2SJ550(L),2SJ550(S) Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS –60 V Gate to source voltage V GSS –20 V Drain current I D –15 A Drain peak current I D(pulse) Note1 –60 A Body-drain diode reverse drain current IDR –15 A Avalanche current I AP Note3 –15 A Avalanche energy E AR Note3 19 mJ Channel dissipation Pch Note2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. PW £ 10ms, duty cycle £ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ‡ 50 W Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS –60 — — V I D = –10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS –2 0 ——V I G = –100mA, VDS = 0 Zero gate voltege drain current IDSS — — –10 mAV DS = –60 V, VGS = 0 Gate to source leak current IGSS —— –10 mAV GS = –16V, VDS = 0 Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V I D = –1mA, VDS = –10V Static drain to source on state RDS(on) — 0.075 0.095 W ID = –8A, VGS = –10V Note4 resistance R DS(on) — 0.105 0.155 W ID = –8A, VGS = –4V Note4 Forward transfer admittance |yfs| 6.5 11 — S I D = –8A, VDS = –10V Note4 Input capacitance Ciss — 850 — pF V DS = –10V Output capacitance Coss — 420 — pF V GS = 0 Reverse transfer capacitance Crss — 110 — pF f = 1MHz Turn-on delay time t d(on) — 12 — ns V GS = –10V, ID = –8A Rise time t r — 75 — ns R L = 3.75W Turn-off delay time t d(off) — 125 — ns Fall time t f —7 5—n s Body–drain diode forward voltage VDF — –1.1 — V I F = –15A, VGS = 0 Body–drain diode reverse recovery time trr — 70 — ns I F = –15A, VGS = 0 diF/ dt =50A/ms Note: 4. Pulse test
2SJ550(L),2SJ550(S) Main Characteristics 0.1 0.3 1 3 10 30 100 –20 –16 –12 –10 V –6 V –20 –16 –12 Tc = 75°C 25°C –25°C V = –10 VDS 1VMTF5FTU 0 50 100 150 200 1000 300 100 0.3
0.1 Ta = 25 °C
10 µs 100 µsPW = 10 ms (1shot) DC Operation (Tc = 25°C) –3.5 V V = –2.5 VGS –4 V –3 V Channel Dissipation Pch (W) Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V)DS Drain Current I (A)D Maximum Safe Operation Area Drain to Source Voltage V (V)DS Drain Current I (A)D Typical Output Characteristics Gate to Source Voltage V (V)GS Drain Current I (A)D Typical Transfer Characteristics Pulse Test Operation in this area is limited by R DS(on)
2SJ550(L),2SJ550(S) –4.0 –3.2 –2.4 –1.6 –0.8 I = –15 AD –10 A –5 A 1VMTF5FTU 0.01 0.40 0.32 0.24 0.16 0.08 –40 0 40 80 120 160 1VMTF5FTU 0.1 0.03 0.3 V = –4 VGS –10 V 1VMTF5FTU –5, –10, –15 A V = –4 VGS –10 V I = –15 AD –10 A –5 A 100 0.1 0.3 25 °C Tc = –25 °C 75 °C V = –10 VDS 1VMTF5FTU Gate to Source Voltage V (V)GS Drain to Source Saturation Voltage vs. Gate to Source Voltage V (V)DS(on) Drain to Source Saturation Voltage Drain Current I (A)D Drain to Source On State Resistance R ( )ΩDS(on) Static Drain to Source on State Resistance vs. Drain Current Case Temperature Tc (°C) R ( )DS(on) Static Drain to Source on State Resistance Ω Static Drain to Source on State Resistance vs. Temperature Drain Current I (A)D Forward Transfer Admittance |y | (S)fs Forward Transfer Admittance vs. Drain Current
2SJ550(L),2SJ550(S) 10000 1000 3000 300 100 –20 –40 –60 –80 –12 –16 8 1 62 43 24 0 –20 1000 200 500 100 V = 0 f = 1 MHz GS Ciss Coss Crss –100 V = –10 V –25 V –50 V DD I = –15 AD V GS V DS V = –50 V –25 V –10 V DD V = –10 V, V = –30 V PW = 5 µs, duty < 1 % GS DD tf rt d(on)t d(off)t Capacitance C (pF) Drain to Source Voltage V (V)DS Typical Capacitance vs. Drain to Source Voltage Gate Charge Qg (nc) Drain to Source Voltage V (V)DS Gate to Source Voltage V (V)GS Dynamic Input Characteristics Drain Current I (A)D Switching Time t (ns) Switching Characteristics 500 200 100 di / dt = 50 A / µs V = 0, Ta = 25 °CGS –20 Reverse Drain Current I (A)DR Reverse Recovery Time trr (ns) Body–Drain Diode Reverse Recovery Time
2SJ550(L),2SJ550(S) D. U. TRg I Monitor AP V Monitor DS VDD 50ΩVin –15 V ID V DS IAP V (BR)DSS L VDD E = • L • I •2 1 V V – VAR AP DSS DSS DD 25 50 75 100 125 150 I = –15 A V = –25 V duty < 0.1 % Rg > 50 AP DD Ω –20 –16 –12 V = 0, 5 VGS –10 V –5 V 1VMTF5FTU Maximum Avalanche Energy vs. Channel Temperature Derating Avalanche Test Circuit Avalanche Waveform Reverse Drain Current I (A)DR Reverse Drain Current vs. Source to Drain Voltage Channel Temperature Tch (°C)Source to Drain Voltage V (V)SD Repetitive Avalanche Energy E (mJ)AR
2SJ550(L),2SJ550(S) Vin Monitor D.U.T. Vin –10 V R L V = –30 V DD trtd(on) Vin 90% 90% 10% 10%Vout td(off) Vout Monitor 50Ω 90% 10% tf 0.3 0.1 0.03 0.01 10 µ 100 µ 1 m 10 m 100 m 1 10 DMP PW T D = PW T ch – c(t) = s (t) • ch – c ch – c = 2.5 °C/W, Tc = 25 °C θ γ θ θ Tc = 25°C D = 1 0.5 0.2 0.1 0.05 0.02 0.01 1shot pulse Switching Time Test Circuit Waveform Pulse Width PW (S) Normalized Transient Thermal Impedance s (t)γ Normalized Transient Thermal Impedance vs. Pulse Width
2SJ550(L),2SJ550(S) Package Dimensions Unit: mm 10.2 ± 0.3 (1.4)8.6 ± 0.3 2.54 ± 0.5 11.3 ± 0.5 (1.5) 0.86+0.2 –0.1 3.0+0.3 –0.5 0.76 ± 0.1 10.0+0.3 –0.5 2.54 ± 0.5 2.59 ± 0.2 0.4 ± 0.1 11.0 ± 0.5 10.2 ± 0.3 (1.4)8.6 ± 0.3 1.27 ± 0.2 2.54 ± 0.5 (1.5) 0.86+0.2 –0.1 10.0+0.3 –0.5 2.54 ± 0.5 4.44 ± 0.2 1.3 ± 0.2 2.59 ± 0.2 0.4 ± 0.1 1.2 ± 0.2 (1.5) 0.1+0.2 –0.1 L type S type Hitachi Code EIAJ JEDEC LDPAK
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