2SJ351 HITACHI

Document overview

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Technical content

Features

  • High power gain
  • Excellent frequency response
  • High speed switching
  • Wide area of safe operation
  • Enhancement-mode
  • Good complementary characteristics
  • Equipped with gate protection diodes

Ordering Information

Type No. V DSX 2SJ351 –180 V 2SJ352 –200 V

2SJ351, 2SJ352 Outline D G S TO-3P 1. Gate 2. Source (Flange) 3. Drain Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage 2SJ351 V DSX –180 V 2SJ352 –200 Gate to source voltage V GSS –20 V Drain current I D –8 A Body to drain diode reverse drain current IDR –8 A Channel dissipation Pch* 1 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at TC = 25°C

2SJ351, 2SJ352 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source 2SJ351 V (BR)DSX –180 — — V I D = –10 mA, VGS = 10 V breakdown voltage 2SJ352 –200 — — Gate to source breakdown voltage V(BR)GSS –2 0 ——V I G = –100 mA, VDS = 0 Gate to source cutoff voltage VGS(off) –0.15 — –1.45 V I D = –100 mA, VDS = –10 V Drain to source saturation voltage VDS(sat) — — –12 V I D = –8 A, VGD = 0*1 Forward transfer admittance |yfs| 0.7 1.0 1.4 S I D = –3 A, VDS = –10 V*1 Input capacitance Ciss — 800 — pF V GS = 5 V, VDS = –10 V, Output capacitance Coss — 1000 — pF f = 1 MHz Reverse transfer capacitance Crss — 18 — pF Turn-on time t on — 320 — ns V DD = –30 V, ID = –4 A Turn-off time t off — 120 — ns Note: 1. Pulse test

2SJ351, 2SJ352 150 100 Channel Dissipation Pch (W) 50 100 150 Case Temperature Tc (°C) Power vs. Temperature Derating –0.2 –0.5 –1.0 –10 –20 Drain to Source Voltage V DS (V) Drain Current ID (A) Maximum Safe Operation Area Ta = 25°C ID max (Continuous) PW = 10 ms 1 ShotPW = 100 ms 1 Shot PW = 1 s 1 ShotDC Operation (T C = 25°C) 2SJ351 2SJ352 –10 Drain to Source Voltage VDS (V) Drain Current ID (A) Typical Output Characteristics TC = 25°C Pch = 125 W VGS = –10 V –10 Drain to Source Voltage V DS (V) Drain Current ID (A) Typical Output Characteristics TC = 25°C VGS = –10 V

2SJ351, 2SJ352 –10 Gate to Source Voltage VGS (V) Drain Current ID (A) Typical Transfer Characteristics VDS = –10 V TC = –25°C25 –0.2 –0.4 –0.6 –0.8 –1.0 Gate to Source Voltage VGS (V) Drain Current ID (A) Typical Transfer Characteristics VDS = –10 V TC = –25°C25 10 k 100 k 1 M 1 m 10 m 100 m 1.0 Frequency f (Hz) Forward Transfer Admittance yfs (S) 2 k TC = 25°C VDS = –10 V ID = –2 A Forward Transfer Admittance vs. Frequency

10 M 20 M

0.5 m 100 200 500 Drain Current ID (A) Switching Time ton, toff (ns) Switching Time vs. Drain Current –0.1 ton –10 toff

2SJ351, 2SJ352 Output R L Input 50 Ω VDD = –30V PW = 50 µs duty ratio = 1% Switching Time Test Circuit Input Output 90% 10% 10% 90% ton toff Waveforms

φ3.2 – 0.2 4.8 – 0.2 1.5 0.3 2.8 0.6 – 0.21.0 – 0.2 15.6 – 0.3 0.5 1.0 5.0 – 0.3 1.6 1.4 Max 2.0 2.0 14.9 – 0.2 3.6 0.9 1.0 Hitachi Code JEDEC EIAJ Weight (reference value) TO-3P Conforms 5.0 g Unit: mm

  1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. Hitachi Asia Pte. Ltd.

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Tel: 535-2100 Fax: 535-1533 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HXHitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Europe GmbH Electronic components Group Dornacher Stra§e 3 D-85622 Feldkirchen, Munich Germany Fax: <49> (89) 9 29 30 00 Hitachi Semiconductor (America) Inc.

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