J270 VISHAY

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Document Number: 70258 S-04233—Rev. D, 02-Jul-01 www.vishay.com 8-1 P-Channel JFETs J270 SST270 J271 SST271 /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST270 0.5 to 2.0 30 6 –2 J/SST271 1.5 to 4.5 30 8 –6 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Low Cutoff Voltage: J270 <2 V /C0068High Input Impedance /C0068Very Low Noise /C0068High Gain /C0068Full Performance from Low-Voltage Power Supply: Down to 2 V /C0068Low Signal Loss/System Error /C0068High System Sensitivity /C0068High-Quality, Low-Level Signal Amplification /C0068High-Gain, Low-Noise Amplifiers /C0068Low-Current, Low-Voltage Battery Amplifiers /C0068Ultrahigh Input Impedance Pre-Amplifiers /C0068High-Side Switching /C0068/C0069/C0083/C0067/C0082/C0073/C0080/C0084/C0073/C0079/C0078 The J/SST270 series consists of all-purpose amplifiers for designs requiring p-channel operation. The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). D S G TO-236 (SOT-23) Top View TO-226AA (TO-92) Top View D S G *Marking Code for TO-236 SST270 (S0)* SST271 (S1)* J270 J271 /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083 Notes a. Derate 2.8 mW//C0095C above 25/C0095C

www.vishay.com 8-2 Document Number: 70258 S-04233— Rev. D, 02-Jul-01 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits J/SST270 J/SST271 Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = 1 /C0109A , VDS = 0 V 45 30 30 Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –1 nA 0.5 2.0 1.5 4.5 V Saturation Drain Currentb IDSS VDS = –15 V, VGS = 0 V –2 –15 –6 –50 mA VGS = 20 V, VDS = 0 V 10 200 200 pA Gate Reverse Current IGSS TA = 125/C0095C 5 nA Gate Operating Current IG VDG = –15 V, ID = –1 mA 10 Drain Cutoff Current ID(off) VDS = –15 V, VGS = 10 V –10 pA Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 V Dynamic Common-Source Forward Transconductance gfs VDS = –15 V, VGS = 0 V 6 15 8 18 mS Common-Source Output Conductance gos VDS = –15 V, VGS = 0 V f = 1 kHz 200 500 /C0109S Common-Source Input Capacitance C iss 20 Common-Source Reverse Transfer Capacitance C rss VDS = –15 V, VGS = 0 V f = 1 MHz 4 pF Equivalent Input Noise Voltage en VDG = –10 V, VGS = 0 V f = 1 kHz 20 nV⁄ √Hz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PSCIA b. Pulse test: PW /C0118300 /C0109s duty cycle /C01183%. /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 200 06 8 1 0 42 160 –100 –80 –60 –40 –20 On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage VGS(off) – Gate-Source Cutoff Voltage (V) rDS @ ID = –1 mA, VGS = 0 V IDSS @ VDS = –15 V, VGS = 0 V IDSS rDS 120 681 02 250 200 150 100 Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage VGS(off) – Gate-Source Cutoff Voltage (V) gfs and gos @ VDS = –15 V VGS = 0 V, f = 1 kHz gfs gos rDS(on) – Drain-Source On-Resistance ( Ω ) IDSS – Saturation Drain Current (mA) gos – Output Conductance (µS) gfs – Forward Transconductance (mS)

Document Number: 70258 S-04233— Rev. D, 02-Jul-01 www.vishay.com 8-3 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 2.0 V Output Characteristics – Drain Current (mA)ID VDS – Drain-Source Voltage (V) 0.6 V 0.8 V 0 –0.6 –0.8 –1 –1.6 –1.2 –0.8 –0.4 –0.4–0.2 VGS(off) = 1.5 V VGS = 0 V 0.4 V Output Characteristics – Drain Current (mA)ID VDS – Drain-Source Voltage (V) 1.0 V 1.5 V 2.0 V 0 –0.3 –0.4 –0.5 –1.6 –1.2 –0.8 –0.4 –0.2–0.1 VGS(off) = 3 V VGS = 0 V Output Characteristics – Drain Current (mA)ID VDS – Drain-Source Voltage (V) 1.5 V 0.5 V –25 0 –12 –16 –20 –20 –15 –10 –8–4 VGS(off) = 3 V VGS = 0 V 1.0 V –10 VGS – Gate-Source Voltage (V) TA = –55/C0095C 125/C0095C – Drain Current (mA)ID Transfer Characteristics 01 23 45 –16 –24 –32 –40 Transfer Characteristics TA = –55/C0095C 125/C0095C VGS – Gate-Source Voltage (V) – Drain Current (mA)ID Capacitance vs. Gate-Source Voltage Capacitance (pF) VGS – Gate-Source Voltage (V) VDS = 0 V f = 1 MHz C iss C rss 01 2 1 6 82 0 0.2 V 0.5 V 25/C0095C VDS = –15 VVGS(off) = 1.5 V 25/C0095C VDS = –15 VVGS(off) = 3 V

www.vishay.com 8-4 Document Number: 70258 S-04233— Rev. D, 02-Jul-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 250 200 150 100 –1 –10 –100 On-Resistance vs. Drain Current ID – Drain Current (mA) TA = 25/C0095C VGS(off) = 1.5 V 3 V 5 V 300 –55 25 125 –15 85 On-Resistance vs. Temperature TA – Temperature (/C0095C) VGS(off) = 1.5 V 3 V 5 V ID = –1 mA rDS changes X 0.7%//C0095C 240 180 120 –35 5 45 65 105 Gate Leakage Current VDG – Drain-Gate Voltage (V) TA = 125/C0095C TA = 25/C0095C –10 mA 10 nA 100 pA 100 nA 1 nA – Gate Leakage IG 10 pA 1 pA 0.1 pA IGSS @ 125/C0095C IGSS @ 25/C0095C ID = –10 mA 10 100 1 k 100 k 10 k 100 Noise Voltage vs. Frequency f – Frequency (Hz) VDS = –10 V ID = –0.1 mA –1 mA Transconductance vs. Drain Current Output Conductance vs. Drain Current –0.1 –1 –10 100 TA = –55/C0095C 125/C0095C ID – Drain Current (mA) I D – Drain Current (mA) –0.1 –1 –10 100 TA = –55/C0095C 125/C0095C 25/C0095C VDS = –15 V f = kHz VGS(off) = 3 V VGS(off) = 3 V VDS = –15 V f = kHz 25/C0095C –1 mA –1 mA gfs – Forward Transconductance (mS) gos – Output Conductance (µS)rDS(on) – Drain-Source On-Resistance ( Ω ) rDS(on) – Drain-Source On-Resistance ( Ω )en – Noise Voltage nV / Hz