SST174 VISHAY

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J/SST174/175/176/177 Series Vishay Siliconix Document Number: 70257 S-04030—Rev. E, 04-Jun-01 www.vishay.com 9-1 P-Channel JFETs J174 SST174 J175 SST175 J176 SST176 J177 SST177 /C0080/C0082/C0079/C0068/C0085/C0067/C0084/C0032/C0083/C0085/C0077/C0077/C0065/C0082/C0089 Part Number VGS(off) (V) rDS(on) Max (/C0087) ID(off) Typ (pA) tON Typ (ns) J/SST174 5 to 10 85 –10 25 J/SST175 3 to 6 125 –10 25 J/SST176 1 to 4 250 –10 25 J/SST177 0.8 to 2.25 300 –10 25 /C0070/C0069/C0065/C0084/C0085/C0082/C0069/C0083 /C0066/C0069/C0078/C0069/C0070/C0073/C0084/C0083 /C0065/C0080/C0080/C0076/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083 /C0068Low On-Resistance: J174 <85 /C0087 /C0068Fast Switching—tON : 25 ns /C0068Low Leakage: –10 pA /C0068Low Capacitance: 5 pF /C0068Low Insertion Loss /C0068Low Error Voltage /C0068High-Speed Analog Circuit Performance /C0068Negligible “Off-Error,” Excellent Accuracy /C0068Good Frequency Response /C0068Eliminates Additional Buffering /C0068Analog Switches /C0068Choppers /C0068Sample-and-Hold /C0068Normally “On” Switches /C0068Current Limiters /C0068/C0069/C0083/C0067/C0082/C0073/C0080/C0084/C0073/C0079/C0078 The J/SST174 series consists of p-channel analog switches designed to provide low on-resistance and fast switching. This series simplifies series-shunt switching applications when combined with the Siliconix J/SST111 series. The TO-226AA (TO-92) plastic package provides a low-cost option, while the TO-236 (SOT-23) package provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). D S G TO-236 (SOT-23) Top View TO-226AA (TO-92) Top View D S G *Marking Code for TO-236 SST174 (S4)* SST175 (S5)* SST176 (S6)* SST177 (S7)* J174 J175 J176 J177 For applications information see AN104.

J/SST174/175/176/177 Series Vishay Siliconix www.vishay.com 9-2 Document Number: 70257 S-04030— Rev. E, 04-Jun-01 /C0065/C0066/C0083/C0079/C0076/C0085/C0084/C0069/C0032/C0077/C0065/C0088/C0073/C0077/C0085/C0077/C0032/C0082/C0065/C0084/C0073/C0078/C0071/C0083 Notes a. Derate 2.8 mW//C0095C above 25/C0095C /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0070/C0079/C0082/C0032/C0074/C0047/C0083/C0083/C0084/C0049/C0055/C0052/C0032/C0065/C0078/C0068/C0032/C0074/C0047/C0083/C0083/C0084/C0049/C0055/C0053 /C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits J/SST174 J/SST175 Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = 1 /C0109A , VDS = 0 V 45 30 30 Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –10 nA 5 10 3 6 V Saturation Drain Currentb IDSS VDS = –15 V, VGS = 0 V –20 –135 –7 –70 mA VGS = 20 V, VDS = 0 V 0.01 1 1 Gate Reverse Current IGSS TA = 125/C0095C 5 Gate Operating Current IG VDG = –15 V, ID = –1 mA 0.01 nA VDS = –15 V, VGS = 10 V –0.01 –1 –1 Drain Cutoff Current ID(off) TA = 125/C0095C –5 Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS = –0.1 V 85 125 /C0087 Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 V Dynamic Common-Source Forward Transconductance gfs VDS = –15 V, ID = –1 mA 4.5 mS Common-Source Output Conductance gos VDS = –15 V, ID = –1 mA f = 1 kHz 20 /C0109S Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 85 125 /C0087 Common-Source Input Capacitance C iss VDS = 0 V, VGS = 0 V, f = 1 MHz 20 Common-Source Reverse Transfer Capacitance C rss VDS = 0 V, VGS = 10 V f = 1 MHz 5 pF Equivalent Input Noise Voltage en VDG = –10 V, ID = –1 mA f = 1 kHz 20 nV⁄ √Hz Switching td(on) 10 Turn-On Time tr VGS(L) = 0 V, VGS(H) = 10 V 15 td(off) GS(L) GS(H) See Switching Circuit 10 ns Turn-Off Time tf 20 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PSCIA b. Pulse test: PW /C0118300 /C0109s duty cycle /C01183%.

J/SST174/175/176/177 Series Vishay Siliconix Document Number: 70257 S-04030— Rev. E, 04-Jun-01 www.vishay.com 9-3 /C0083/C0080/C0069/C0067/C0073/C0070/C0073/C0067/C0065/C0084/C0073/C0079/C0078/C0083/C0032/C0070/C0079/C0082/C0032/C0074/C0047/C0083/C0083/C0084/C0049/C0055/C0054/C0032/C0065/C0078/C0068/C0032/C0074/C0047/C0083/C0083/C0084/C0049/C0055/C0055 /C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Limits J/SST176 J/SST177 Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static Gate-Source Breakdown Voltage V(BR)GSS IG = 1 /C0109A , VDS = 0 V 45 30 30 Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –10 nA 1 4 0.8 2.25 V Saturation Drain Currentb IDSS VDS = –15 V, VGS = 0 V –2 –35 –1.5 –20 mA VGS = 20 V, VDS = 0 V 0.01 1 1 Gate Reverse Current IGSS TA = 125/C0095C 5 Gate Operating Current IG VDG = –15 V, ID = –1 mA 0.01 nA VDS = –15 V, VGS = 10 V –0.01 –1 –1 Drain Cutoff Current ID(off) TA = 125/C0095C –5 Drain-Source On-Resistance rDS(on) VGS = 0 V, VDS = –0.1 V 250 300 /C0087 Gate-Source Forward Voltage VGS(F) IG = –1 mA , VDS = 0 V –0.7 V Dynamic Common-Source Forward Transconductance gfs VDS = –15 V, ID = –1 mA 4.5 mS Common-Source Output Conductance gos f = 1 kHz 20 /C0109S Drain-Source On-Resistance rds(on) VGS = 0 V, ID = 0 mA , f = 1 kHz 250 300 /C0087 Common-Source Input Capacitance C iss VDS = 0 V, VGS = 0 V, f = 1 MHz 20 Common-Source Reverse Transfer Capacitance C rss VDS = 0 V, VGS = 10 V f = 1 MHz 5 pF Equivalent Input Noise Voltage en VDG = –10 V, ID = –1 mA f = 1 kHz 20 nV⁄ √Hz Switching td(on) 10 Turn-On Time tr VGS(L) = 0 V, VGS(H) = 10 V 15 td(off) GS(L) GS(H) See Switching Circuit 10 ns Turn-Off Time tf 20 Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PSCIA b. Pulse test: PW /C0118300 /C0109s duty cycle /C01183%.

J/SST174/175/176/177 Series Vishay Siliconix www.vishay.com 9-4 Document Number: 70257 S-04030— Rev. E, 04-Jun-01 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 200 06 8 1 0 42 160 –100 –80 –60 –40 –20 On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage VGS(off) – Gate-Source Cutoff Voltage (V) rDS @ ID = –1 mA, VGS = 0 V IDSS @ VDS = –15 V, VGS = 0 V IDSS rDS 120 681 02 250 200 150 100 Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage VGS(off) – Gate-Source Cutoff Voltage (V) gfs and gos @ VDS = –15 V VGS = 0 V, f = 1 kHz gfs gos Output Characteristics – Drain Current (mA)ID VDS – Drain-Source Voltage (V) 1.0 V 0.5 V 1.5 V 2.0 V –25 0 –12 –16 –20 –20 –15 –10 –8–4 VGS(off) = 3 V VGS = 0 V Output Characteristics – Drain Current (mA)ID VDS – Drain-Source Voltage (V) 1.5 V 2.0 V 0 –0.3 –0.4 –0.5 –1.6 –1.2 –0.8 –0.4 –0.2–0.1 VGS(off) = 3 V VGS = 0 V 250 200 150 100 –1 –10 –100 On-Resistance vs. Drain Current ID – Drain Current (mA) TA = 25/C0095C VGS(off) = 1.5 V 3 V 5 V 300 –55 25 125 –15 85 On-Resistance vs. Temperature TA – Temperature (/C0095C) VGS(off) = 1.5 V 3 V 5 V ID = –1 mA rDS changes X 0.7%//C0095C 240 180 120 –35 5 45 65 105 1.0 V 0.5 V S) gos– Output Conductance (/C0109 rDS(on) – Drain-Source On-Resistance ( Ω ) IDSS – Saturation Drain Current (mA) gfs – Forward Transconductance (mS)rDS(on) – Drain-Source On-Resistance ( Ω )rDS(on) – Drain-Source On-Resistance ( Ω )

J/SST174/175/176/177 Series Vishay Siliconix Document Number: 70257 S-04030— Rev. E, 04-Jun-01 www.vishay.com 9-5 /C0084/C0089/C0080/C0073/C0067/C0065/C0076/C0032/C0067/C0072/C0065/C0082/C0065/C0067/C0084/C0069/C0082/C0073/C0083/C0084/C0073/C0067/C0083/C0032/C0040/C0084/C0065/C0032/C0061/C0032/C0050/C0053/C0095/C0067/C0032/C0085/C0078/C0076/C0069/C0083/C0083/C0032/C0079/C0084/C0072/C0069/C0082/C0087/C0073/C0083/C0069/C0032/C0078/C0079/C0084/C0069/C0068/C0041 Turn-On Switching Turn-Off Switching VGS(off) – Gate-Source Cutoff Voltage (V) I D – Drain Current (mA) tr approximately independent of ID VDD = –10 V, RG = 220 /C0087 VGS(H) = 10 V, VGS(L) = 0 V tON @ ID = –10 mA td(off) VGS(off) = 1.5 V tf VGS(off) = 1.5 V tON @ ID = –5 mA VDD = –10 V, VGS(H) = 10 V, VGS(L) = 0 V 1 234 tr @ ID = –5 mA 5 V 5 V Switching Time (ns) Switching Time (ns) Capacitance vs. Gate-Source Voltage Gate Leakage Current Capacitance (pF) VGS – Gate-Source Voltage (V) V DG – Drain-Gate Voltage (V) VDS = 0 V f = 1 MHz C iss C rss 10 nA 100 pA 100 nA 1 nA – Gate Leakage IG 10 pA 1 pA 0.1 pA 01 2 1 6 82 0 0 –40–20–10 –50 4 –30 10 100 1 k 100 k 10 k 100 Transfer Characteristics Noise Voltage vs. Frequency f – Frequency (Hz) TA = –55/C0095C 125/C0095C VDS = –10 V ID = –0.1 mA –1 mA – Drain Current (mA)ID VGS – Gate-Source Voltage (V) –40 03 4 5 –32 –16 –24 TA = 125/C0095C TA = 25/C0095C –10 mA IGSS @ 125/C0095C IGSS @ 25/C0095C –10 mA VDS = –15 VVGS(off) = 3 V 25/C0095C –1 mA ID = –1 mA en – Noise Voltage nV / Hz

7.5 k/C0087 51 /C0087 1.2 k/C0087 51 /C0087 51 /C0087 1.2 k/C0087 0.1 /C0109F Sampling Scope VGG VDD R G VGS(H) VGS(L) R L J/SST174/175/176/177 Series Vishay Siliconix www.vishay.com 9-6 Document Number: 70257 S-04030— Rev. E, 04-Jun-01 /C0083/C0087/C0073/C0084/C0067/C0072/C0073/C0078/C0071/C0032/C0084/C0073/C0077/C0069/C0032/C0084/C0069/C0083/C0084/C0032/C0067/C0073/C0082/C0067/C0085/C0073/C0084 174 175 176 177 VDD –10 V –6 V –6 V –6 V VGG 20 V 12 V 8 V 5 V R L* 560 /C0087 750 /C00871800 /C00875600 /C0087 R G * 100 /C0087 220 /C0087 390 /C0087 390 /C0087 ID(on) –15 mA –7 mA –3 mA –1 mA *Non-inductive /C0073/C0078/C0080/C0085/C0084/C0032/C0080/C0085/C0076/C0083/C0069 /C0083/C0065/C0077/C0080/C0076/C0073/C0078/C0071/C0032/C0083/C0067/C0079/C0080/C0069 Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Rise Time 0.4 ns Input Resistance 10 M/C0087 Input Capacitance 1.5 pF See Typical Characteristics curves for changes.