2SJ117 HITACHI
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- High speed switching
- Good frequency characteristics
- Wide area of safe operation
- Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline 1 2 3 S G D TO-220AB 1. Gate 2. Drain (Flange) 3. Source
Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage V DSS –400 V Gate to source voltage V GSS ±20 V Drain current I D –2 A Drain peak current I D(pulse) –4 A Body to drain diode reverse drain current IDR –2 A Channel dissipation Pch* 1 40 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS –400 — — V I D = –10 mA, VGS = 0 Gate to source leak current IGSS ——± 1 µ AV GS = ±20 V, VDS = 0 Zero gate voltage drain current IDSS ——– 1m A V DS = –320 V, VGS = 0 Gate to source cutoff voltage VGS(off) –2.0 — –5.0 V I D = –1 mA, VDS = –10 V Static drain to source on state RDS(on) —5 7 I D = –1 A, VGS = –15 V*1 resistance Forward transfer admittance |yfs| 0.4 0.7 — S I D = –1 A, VDS = –20 V*1 Input capacitance Ciss — 520 — pF V DS = –10 V, VGS = 0, Output capacitance Coss — 110 — pF f = 1 MHz Reverse transfer capacitance Crss — 15 — pF Turn-on delay time t d(on) — 10 — ns I D = –2 A, VGS = –15 V, Rise time t r — 25 — ns R L = 15 Turn-off delay time t d(off) —4 5—n s Fall time t f —3 5—n s Body to drain diode forward voltage VDF — –0.8 — V I F = –1 A, VGS = 0 Body to drain diode reverse recovery time trr — 300 — ns I F = –1 A, VGS = 0, diF/dt = 100 A/µs Note: 1. Pulse test
Switching Time Test Circuit Vin Monitor Vin –15 V 50 Ω D.U.T Vout Monitor R L VDD –30 V=.. Waveforms Vin Vout td (on) 10% tr tf 10% 90% 90% 10% 90% td (off)