Overview
IRLR3105TRPBF is listed in the Sensor category. Available datasheets include documents from International Rectifier.
Summary
Logic-Level Gate Drive
Description
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Source title
IRLR3105TRPBF Datasheet(PDF) - International Rectifier