Overview
IRLR2908 is listed in the Sensor category. Available datasheets include documents from International Rectifier.
Summary
AUTOMOTIVE MOSFET
Description
Specifically designed for Automotive applications, this HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Source title
IRLR2908 Datasheet(PDF) - International Rectifier