Overview
IRLI630G is listed in the IC category. Available datasheets include documents from Vishay Siliconix, International Rectifier.
Summary
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=6.2A)
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.