Overview
IRL630 is listed in the IC category. Available datasheets include documents from Vishay Siliconix, International Rectifier.
Summary
Power MOSFET(Vdss=200V, RdS(on)=0.40ohm, Id=9.0A)
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.