Overview
IRFR4105Z is listed in the Sensor category. Available datasheets include documents from International Rectifier.
Summary
Power MOSFET(Vds=55V, Rds(on)=24.5mohm, Id=30A)
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Source title
IRFR4105Z Datasheet(PDF) - International Rectifier