Sensor

IRFR3710ZPBF

3 manufacturer specifications

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operatin…

Manufacturer variants: 3

Selected specification: Infineon Technologies A...

Documents: 8

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Manufacturer Specifications

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3 manufacturers / 8 documents

Manufacturer	Series	Package	Documents	Available	Select specification
International Rectifier	-	-	4	PDF HTML	View spec
Kersemi Electronic Co.,...	-	-	3	PDF HTML	View spec
Infineon Technologies A...	-	-	1	PDF HTML	Viewing

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Infineon Technologies A... IRFR3710ZPBF overview.

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Overview

IRFR3710ZPBF is listed in the Sensor category. Available datasheets include documents from International Rectifier.

Summary

HEXFET짰 Power MOSFET 2016-5-31

Description

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Source title IRFR3710ZPBF Datasheet(PDF) - Infineon Technologies AG

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