Logic IC

IRFD9113

2 manufacturer specifications

These are P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the…

Manufacturer variants: 2

Selected specification: Harris Corporation

Documents: 2

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Manufacturer Specifications

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2 manufacturers / 2 documents

Manufacturer	Series	Package	Documents	Available	Select specification
Harris Corporation	-	-	1	PDF HTML	Viewing
International Rectifier	-	-	1	PDF HTML	View spec

Selected Specification

Harris Corporation IRFD9113 overview.

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Overview

IRFD9113 is listed in the Logic IC category. Available datasheets include documents from Harris Corporation, International Rectifier.

Summary

-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs

Description

These are P-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Source title IRFD9113 Datasheet(PDF) - Harris Corporation

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