Overview
IRFD320PBF is listed in the Interface category. Available datasheets include documents from International Rectifier, Vishay Siliconix. DigiCamel provides a local PDF for online reference.
Summary
HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=1.8廓 , ID=0.49A )
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.