Overview
IRFD224PBF is listed in the Interface category. Available datasheets include documents from Vishay Siliconix, International Rectifier. DigiCamel provides a local PDF for online reference.
Summary
HEXFET POWER MOSFET (VDSS = 250V , RDS(on) = 1.1廓 , ID = 0.63A)
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness. The 4-pin DIP package is a low-cost machine-insertable case style which can be stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 watt.
Source title
IRFD224PBF Datasheet(PDF) - International Rectifier