IRFBE30

4 manufacturer specifications

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Manufacturer variants: 4

Selected specification: International Rectifier

Documents: 6

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Manufacturer Specifications

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4 manufacturers / 6 documents

Manufacturer	Series	Package	Documents	Available	Select specification
Vishay Siliconix	-	-	3	PDF HTML	View spec
Inchange Semiconductor ...	-	-	1	PDF HTML	View spec
International Rectifier	-	-	1	PDF HTML	Viewing
Kersemi Electronic Co.,...	-	-	1	PDF HTML	View spec

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International Rectifier IRFBE30 overview.

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Overview

IRFBE30 is listed in the IC category. Available datasheets include documents from Vishay Siliconix, International Rectifier.

Summary

Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)

Description

Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

Source title IRFBE30 Datasheet(PDF) - International Rectifier

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