Overview
IRFB9N30A is listed in the IC category. Available datasheets include documents from International Rectifier. DigiCamel provides a local PDF for online reference.
Summary
Power MOSFET(Vdss=300V, Rds(on)=0.45ohm, Id=9.3A)
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Source title
IRFB9N30A Datasheet(PDF) - International Rectifier