Overview
IRF9952QTRPBF is listed in the Sensor category. Available datasheets include documents from International Rectifier. DigiCamel provides a local PDF for online reference.
Summary
Advanced Process Technology
Description
These HEXFET® Power MOSFETs in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these HEXFET Power MOSFETs are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Source title
IRF9952QTRPBF Datasheet(PDF) - International Rectifier