IRF640NS

3 manufacturer specifications

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined wi…

Manufacturer variants: 3

Selected specification: International Rectifier

Documents: 5

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Manufacturer Specifications

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3 manufacturers / 5 documents

Manufacturer	Series	Package	Documents	Available	Select specification
International Rectifier	-	-	3	PDF HTML	Viewing
Fairchild Semiconductor	-	-	1	PDF HTML	View spec
Kersemi Electronic Co.,...	-	-	1	PDF HTML	View spec

Selected Specification

International Rectifier IRF640NS overview.

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Overview

IRF640NS is listed in the IC category. Available datasheets include documents from International Rectifier, Fairchild Semiconductor.

Summary

Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Source title IRF640NS Datasheet(PDF) - International Rectifier

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