Overview
IRF634N is listed in the IC category. Available datasheets include documents from International Rectifier, Vishay Siliconix.
Summary
Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)
Description
Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Source title
IRF634N Datasheet(PDF) - International Rectifier