IRF520N

2 manufacturer specifications

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast sw…

Manufacturer variants: 2

Selected specification: International Rectifier

Documents: 3

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Manufacturer Specifications

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2 manufacturers / 3 documents

Manufacturer	Series	Package	Documents	Available	Select specification
Inchange Semiconductor ...	-	-	2	PDF HTML	View spec
International Rectifier	-	-	1	PDF HTML	Viewing

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International Rectifier IRF520N overview.

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Overview

IRF520N is listed in the IC category. Available datasheets include documents from International Rectifier.

Summary

Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Source title IRF520N Datasheet(PDF) - International Rectifier

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