Overview
IRF3808 is listed in the Sensor category. Available datasheets include documents from International Rectifier.
Summary
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A??
Description
Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest process ing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in higher power Automotive electronic systems and a wide variety of other applications.
Source title
IRF3808 Datasheet(PDF) - International Rectifier