IRF3710

5 manufacturer specifications

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the f…

Manufacturer variants: 5

Selected specification: International Rectifier

Documents: 5

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Manufacturer Specifications

Compare IRF3710 variants.

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5 manufacturers / 5 documents

Manufacturer	Series	Package	Documents	Available	Select specification
First Silicon Co., Ltd	-	-	1	PDF HTML	View spec
Inchange Semiconductor ...	-	-	1	PDF HTML	View spec
International Rectifier	-	-	1	PDF HTML	Viewing
Kersemi Electronic Co.,...	-	-	1	PDF HTML	View spec
Nell Semiconductor Co.,...	-	-	1	PDF HTML	View spec

Selected Specification

International Rectifier IRF3710 overview.

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Overview

IRF3710 is listed in the IC category. Available datasheets include documents from First Silicon Co., Ltd, International Rectifier.

Summary

Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A)

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Source title IRF3710 Datasheet(PDF) - International Rectifier

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