Overview
IRF3007S is listed in the Sensor category. Available datasheets include documents from International Rectifier.
Summary
HEXFET Power MOSFET
Description
Specifically designed for Automotive applications, this design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Source title
IRF3007S Datasheet(PDF) - International Rectifier