Overview
IRF2204LPBF is listed in the Sensor category. Available datasheets include documents from International Rectifier. DigiCamel provides a local PDF for online reference.
Summary
HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )
Description
This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Source title
IRF2204LPBF Datasheet(PDF) - International Rectifier