IMW120R060M1H ISC
Document overview
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Technical content
iscN-ChannelSiCMOSFETTransistor IMW120R060M1H www.iscsemi.com 1
FEATURES
- DrainCurrent-ID=36A@TC=25℃
- DrainSource Voltage-VDSS=1200V(Min)
- Drain-SourceSaturation Voltage -RDS(on) =83mΩ(Max)@VGS=18V,ID=13A APPLICATION
- Energygeneration
- Industrialpower supplies
- Infrastructure–Charge ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMALCHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-SourceVoltage 1200 V VGS Gate-SourceVoltage-Continuous -7/23 V ID DrainCurrent-Continuous 36 A PD TotalDissipation 150 W TJ Max.OperatingJunctionTemperature 175 ℃ Tstg StorageTemperature -55~175 ℃ SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase 1 ℃/W
iscN-ChannelSiCMOSFETTransistor IMW120R060M1H www.iscsemi.com 2 ELECTRICALCHARACTERISTICS（TC=25℃ unless otherwisespecified） SYMBOL PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS Drain-SourceBreakdownVoltage VGS=0V;ID=250uA 1200 -- V VGS(th) GateThresholdVoltage VDS=VGS;ID=5.6mA 3.5 5.7 V RDS(on) Drain-sourceon-stateresistance VGS=18V;ID=13A -- 83 mΩ IGSS Gate-BodyLeakageCurrent VGS=23V;VDS=0V -- 100 nA VGS=-7V;VDS=0V -100 nA IDSS ZeroGateVoltageDrainCurrent VDS=1200V;VGS=0V -- 180 uA VSD DiodeForwardVoltage IS=13A;VGS=0V -- 5.2 V PRODUCTDISCLAIMER ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages. Itis strictlyprohibitedto reprintorcopy partorallof thisdatasheetwithoutpermission fromISC.