HZC2.0

HZC22 HITACHI

Document overview

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• PDF pages: 6

Technical content

Features

• These diodes are delivered taped.
• Ultra small Flat Package (UFP) is suitable for surface mount design.

Ordering Information

Type No. Laser Mark Package Code HZC Series Let to Mark Code UFP Pin Arrangement 12 51 Cathode mark Mark 1. Cathode 2. Anode

Rev.1, Jan. 2002, page 2 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Value Unit Power dissipation Pd * 150 mW Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. See Fig2.

Electrical Characteristics

(Ta = 25°C) Zener voltage Reverse current Dynamic resistance ESD-Capability * VZ (V) Test Condition IR (µµµµA) Test Condition rd (ΩΩΩΩ ) Test Condition — (kV) Type Min Max I Z (mA) Max V R (V) Max I Z (mA) Min HZC10 9.45 10.55 5 0.5 7.0 30 5 30 HZC11 10.44 11.56 5 0.5 8.0 30 5 30 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 Ω , Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec

Rev.1, Jan. 2002, page 3 of 6 Zener voltage Reverse current Dynamic resistance ESD-Capability * VZ (V) Test Condition IR (µµµµA) Test Condition rd (ΩΩΩΩ ) Test Condition — (kV) Type Min Max I Z (mA) Max V R (V) Max I Z (mA) Min HZC12 11.42 12.60 5 0.5 9.0 35 5 30 HZC13 12.47 13.96 5 0.5 10.0 35 5 30 HZC15 13.84 15.52 5 0.5 11.0 40 5 30 HZC16 15.37 17.09 5 0.5 12.0 40 5 30 HZC18 16.94 19.03 5 0.5 13.0 45 5 30 HZC20 18.86 21.08 5 0.5 15.0 50 5 30 HZC22 20.88 23.17 5 0.5 17.0 55 5 30 HZC24 22.93 25.57 5 0.5 19.0 60 5 30 HZC27 25.10 28.90 2 0.5 21.0 70 2 30 HZC30 28.00 32.00 2 0.5 23.0 80 2 30 HZC33 31.00 35.00 2 0.5 25.0 80 2 25 HZC36 34.00 38.00 2 0.5 27.0 90 2 20 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 Ω , Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec Mark Code Type Mark No. Type Mark No. Type Mark No. HZC2.0 20 HZC5.6 56 HZC15 15 * HZC2.2 22 HZC6.2 62 HZC16 16 * HZC2.4 24 HZC6.8 68 HZC18 18 * HZC2.7 27 HZC7.5 75 HZC20 20 * HZC3.0 30 HZC8.2 82 HZC22 22 * HZC3.3 33 HZC9.1 91 HZC24 24 * HZC3.6 36 HZC10 10 * HZC27 27 * HZC3.9 39 HZC11 11 * HZC30 30 * HZC4.3 43 HZC12 12 * HZC33 33 * HZC4.7 47 HZC13 13 * HZC36 36 * HZC5.1 51 Note: 1. HZC10 To HZC36 has I , on the right of Laser Mark.

Rev.1, Jan. 2002, page 4 of 6 Main Characteristic 0 5 10 15 20 25 −0.06 30 35 40 45 −0.05 −0.04 −0.03 −0.02 −0.01 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 −25 −20 −15 −10 %/°C mV/°C Zener Voltage VZ (V) Fig.2 Temperature Coefficient vs. Zener voltage Zener Voltage Temperature Coefficient γZ (%/°C) Zener Voltage Temperature Coefficient γZ (mV/°C) 250 200 150 100 20015010050 3.0 0.8 1.5 1.5 Polyimide board 20h×15w ×0.8t unit: mm Fig.2 Power Dissipation vs. Ambient Temperature Ambient Temperature Ta (°C) Power Dissipation Pd (mW) 0 4 8 12 16 20 24 28 32 40 36 HZC18 HZC2.0 HZC20HZC22 HZC2.4 HZC3.0 HZC3.6 HZC4.3 HZC5.1 HZC6.2 HZC7.5 HZC8.2 HZC9.1 HZC10 HZC11 HZC13 HZC16 HZC36HZC33HZC30HZC27 HZC6.8 HZC12 HZC15 HZC24 Zener Voltage VZ (V) Fig.1 Zener current vs. Zener voltage Zener Current IZ (mA)

Rev.1, Jan. 2002, page 5 of 6 Package Dimensions Hitachi Code JEDEC JEITA Mass (reference value) UFP Conforms 0.0016 g 1.2 ± 0.10 1.6 ± 0.10 0.3 ± 0.05 0.13 ± 0.05 As of July, 2001 Unit: mm

Rev.1, Jan. 2002, page 6 of 6 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi’s sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan. Hitachi Asia Ltd. Hitachi Tower

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