Overview
HY62256ALR1 is listed in the Memory category. Available datasheets include documents from Hynix Semiconductor.
Summary
DRAM & SRAM MEMORY
Description
The HY62256A/HY62256A-I is a high-speed, low power and 32,786 x 8-bits CMOS Static Random Access Memory fabricated using Hyundais high performance CMOS process technology. The HY62256A/HY62256A-I has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt. Using the CMOS technology, supply voltages from 2.0 to 5.5 volt has little effect on supply current in the data retention mode. The HY62256A/HY62256A-I is suitable for use in low voltage operation and battery back-up application.
Source title
HY62256ALR1 Datasheet(PDF) - List of Unclassifed Manufacturers