HS733 HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS The H733 is designed for driver stage of AF amplifier And low speed switching. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -60 V IC=-100μA, I E=0 BVCEO Collector-Emitter Breakdown Voltage -50 V IC=-10mA, I B=0 BVEBO Emitter-Base Breakdown Voltage -5 V IE=-10μA，IC=0 HFE DC Current Gain 70 700 VCE=-6V, IC=-1mA VCE(sat) Collector- Emitter Saturation Voltage -0.3 V IC=-100mA, IB=-10mA VBE(ON) Base-Emitter On Voltage -0.5 -0.8 V VCE=-6V, IC=-1mA ICBO Collector Cut-off Current -100 nA VCB=-60V, IE=0 IEBO Emitter Cut-off Current -100 nA VEB=-5V, IC=0 fT Current Gain-Bandwidth Product 50 180 MHz VCE=-6V, IC=-10mA Cob Output Capacitance 2.8 pF VCB=-6V, IE=0，f=1MHz NF Noise Figure 6.0 20 dB VCE=-6V,IC=-0.3mA， f=100Hz，Rs=10Ω █ h FE Classification O Y GR BL 70—140 120—240 200—400 350—700 1―Emitter，E 2―Base，B 3― Collector，C TO-92 HS733 PNP S I L I C O N T R A N S I S T O R