HS669A HUASHAN
Document overview
- Manufacturer or author: Provided By www.digicamel.com(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 2
Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Low Frequancy Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage 180 V IC= 1mA, IE=0 BVCEO Collector-Emitter Breakdown V oltage 160 V IC= 10mA, IB=0 BVEBO Emitter-Base Breakdown V oltage 5 V IE= 1mA, IC=0 ICBO Collector Cut-off Current 10 μA VCB=160V , IE=0 HFE（1） DC Current Gain 60 200 VCE= 5V , IC= 150mA HFE（2） DC Current Gain 30 VCE= 5V , IC= 500mA VCE(sat) Collector- Emitter Saturation V oltage 1 V IC= 500mA, IB= 50mA VBE Base-Emitter V oltage 1.5 V VCE=5V , IC=150mA ft Current Gain-Bandwidth Product 140 MHz VCE=5V , IC=150mA, Cob Output Capacitance 14 pF VCB=10V , IE=0，f=1MHz █ hFE Classification B C 6 0 —120 100 —200 NPN S I L I C O N T R A N S I S T O R HS669A TO-126 1―Emitter，E 2―Collector，C 3―Base，B