HS649A HUASHAN
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Low Frequancy Power Amplifier. █ ABSOLUTE MAXIMUM RATINGS（Ta=25℃） █ ELECTRICAL CHARACTERISTICS（Ta=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown Voltage -180 V IC=-1mA, IE=0 BVCEO Collector-Emitter Breakdown Voltage -160 V IC=-10mA, IB=0 BVEBO Emitter-Base Breakdown Voltage -5 V IE=-1mA, IC=0 ICBO Collector Cut-off Current -10 μA VCB=-160V, IE=0 HFE（1） DC Current Gain 60 200 VCE=-5V, IC=-150mA HFE（2） DC Current Gain 30 VCE=-5V, IC=-500mA VCE(sat) Collector- Emitter Saturation Voltage -1 V IC=-500mA, IB=-50mA VBE Base-Emitter Voltage -1.5 V VCE=-5V, IC=-150mA ft Current Gain-Bandwidth Product 140 MHz VCE=-5V, IC=-150mA, Cob Output Capacitance 27 pF VCB=-10V, IE=0，f=1MHz █ hFE Classification B C 60—120 100—200 PNP S I L I C O N T R A N S I S T O R HS649A TO-126 1―Emitter，E 2―Collector，C 3―Base，B