HS631K HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Low frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage -120 V IC=-10μA, IE=0 BVCEO Collector-Emitter Breakdown V oltage -120 V IC=-1mA, IB=0 BVEBO Emitter-Base Breakdown V oltage -5 V IE=-10μA，IC=0 ICBO Collector Cut-off Current -1 μ A VCB=-50V , IE=0 IEBO Emitter Cut-off Current -1 μ A VEB=-4V , IC=0 HFE（1） DC Current Gain 60 320 VCE=-5V , IC=-50mA HFE（2） DC Current Gain 20 VCE=-5V , IC=-500mA VCE(sat) Collector- Emitter Saturation V oltage -0.15 -0.4 V IC=-500mA, IB=-50mA VBE(sat) Base-Emitter Saturation V oltage -0.85 -1.2 V IC=-500mA, IB=-50mA tOFF Turn-Off Time 100 nS tSTG Storage Time 600 nS See specified test circuit tF Fall Time 80 nS ft Current Gain-Bandwidth Product 110 MHz VCE=-10V , IC=-50mA, Cob Output Capacitance 30 pF VCB=10V , IE=0，f=1MHz █ hFE Classification D E F 6 0 —120 100 —200 160 —320 PNP S I L I C O N T R A N S I S T O R HS631K TO-126 1―Emitter，E 2―Collector，C 3―Base，B
Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R A N S I S T O R HS631K
Shantou Huashan Electronic Devices Co.,Ltd. PNP S I L I C O N T R A N S I S T O R HS631K