HS600K HUASHAN
Document overview
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Technical content
Shantou Huashan Electronic Devices Co.,Ltd. █ APPLICATIONS Low frequency power amplifier，Medium Seed switching. █ ABSOLUTE MAXIMUM RATINGS （Ta=25℃） █ ELECTRICAL CHARACTERISTICS （T a=25℃） Symbol Characteristics Min Typ Max Unit Test Conditions BVCBO Collector-Base Breakdown V oltage 120 V IC=10μA, IE=0 BVCEO Collector-Emitter Breakdown V oltage 120 V IC=1mA, IB=0 BVEBO Emitter-Base Breakdown V oltage 5 V IE=10μA，IC=0 ICBO Collector Cut-off Current 1 μ A VCB=50V , IE=0 IEBO Emitter Cut-off Current 1 μ A VEB=4V , IC=0 HFE（1） DC Current Gain 60 320 VCE=5V , IC=50mA HFE（2） DC Current Gain 20 VCE=5V , IC=500mA VCE(sat) Collector- Emitter Saturation V oltage 0.15 0.4 V IC=500mA, IB=50mA VBE(sat) Base-Emitter Saturation V oltage 0.85 1.2 V IC=500mA, IB=50mA tOFF Turn-Off Time 500 nS tSTG Storage Time 700 nS See specified test circuit tF Fall Time 100 nS ft Current Gain-Bandwidth Product 130 MHz VCE=10V , IC=50mA, Cob Output Capacitance 20 pF VCB=10V , IE=0，f=1MHz █ hFE Classification D E F 6 0 —120 100 —200 160 —320 NPN S I L I C O N T R A N S I S T O R HS600K TO-126 1―Emitter，E 2―Collector，C 3―Base，B
Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T R A N S I S T O R HS600K
Shantou Huashan Electronic Devices Co.,Ltd. NPN S I L I C O N T R A N S I S T O R HS600K