HRW26 HITACHI
Document overview
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- PDF pages: 2
Technical content
Features
- Low forward voltage drop. (VF =0.55V max)
- High reverse voltage. (VR =40V max)
Ordering Information
Type No. Laser Mark Package Code HRW26 HRW26 TO-220AB Pin Arrangement 1 23
1 Anode
2 Cathode
3 Anode
ADE-208-155B(Z) Rev. 2 Nov. 1994 HRW26 Silicon Schottky Barrier Diode for High Frequency Rectifying Absolute Maximum Ratings (Ta = 25°C)* Item Symbol Value Unit Repetitive peak reverse voltage V RRM 40 V Average forward current I o 10 A Non-Repetitive peak forward surge currentIFSM * 70 A Junction temperature T j 125 °C Storage temperature T stg -40 to +125 °C * Per one device Square wave, Duty (1/2), Tc=95°C, Sum of two devices * Half sine wave 10msec Electrical Characteristics (Ta = 25°C) * Item Symbol Min Typ Max Unit Test Condition Forward voltage V F — — 0.55 V I F = 4.0 A Reverse current I R — — 1.0 mA V R = 40 V * Per one device
0 0.4 1.0 1.00.2 0.6 0.8 Forward current I (A)F Forward voltage V (V)F Pulse test Reverse voltage V (V)R 0 20 Reverse current I (A)R 5010 30 40 Pulse test Fig.1 Forward current Vs. Forward voltage Fig.2 Reverse current Vs. Reverse voltage
11.5 Max
9.8 Max
7.6 Min
4.8 Max
1.5 Max
0.5 Typ
2.7 Max
0.76 ± 0.1 2.54 ± 0.5 5.1 ± 0.5
6.3 Min
15.3 Max12.7 Min 1.27 3.6+ 0.1– 0.08φ 1 2 3 Lot No. HRW26 Weight (g) 1.8 Package Dimensions Unit: mm HRW26